公开(公告)号：US09502056B1

公开(公告)日：2016-11-22

申请号：US15082992

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Hidekazu Kojima ,  Takayasu Kanaya ,  Hideyuki Ukita ,  Minoru Ota ,  Kohei Honma

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  G01R33/09 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3909 ,  G11B5/3932 ,  H01L43/08 ,  H01L43/12

Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

Abstract translation: TMR元件包括具有侧壁的堆叠以及与侧壁接触的绝缘层。 堆叠包括第一铁磁层，第二铁磁层和位于第一和第二铁磁层之间的隧道势垒层。 绝缘层包括仅与侧壁的一部分接触的岛状结构部分和覆盖岛状结构部分和侧壁的涂覆部分。 隧道势垒层含有第一氧化物。 岛状结构部分包含第二氧化物。 第一和第二氧化物中的每一个都是金属氧化物或半导体氧化物。 G2-G1为435kJ / mol以下，其中G1和G2分别为第一氧化物和第二氧化物在280℃下形成的标准吉布斯能量。

公开(公告)号：US09589582B2

公开(公告)日：2017-03-07

申请号：US15162091

申请日：2016-05-23

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/31 ,  G11B5/60 ,  G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a gap layer and a 10-16 kG magnetic layer in the side shields, and between the leading gap and a 16-19 kG magnetic layer in the leading shield to improve the track field gradient and cross-track field gradient while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. The trailing shield has a second hot seed layer on the write gap and a 16-19 kG magnetic layer that contacts the 10-16 kG side shield magnetic layer thereby forming an all wrap around (AWA) shield configuration.

Abstract translation: 公开了一种PMR写入器，其中在侧面屏蔽之间的间隙层和10-16kG磁性层之间以及在前导间隙和第二磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS） 一个16-19 kG的磁屏蔽层，以提高轨道场梯度和跨轨道场梯度，同时保持写入能力。 HS为10至100nm厚，并且具有面向高度≤0.15微米的写极的第一面和面向主极扩张侧的第二面，其可延伸至≤0.5微米的全侧屏蔽高度。 后屏蔽在写间隙上具有第二热种子层，以及接触10-16kG侧屏蔽磁性层的16-19kG磁性层，从而形成全包裹（AWA）屏蔽配置。

公开(公告)号：US20160307586A1

公开(公告)日：2016-10-20

申请号：US15162091

申请日：2016-05-23

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/31 ,  G11B5/127 ,  G11B5/60

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a gap layer and a 10-16 kG magnetic layer in the side shields, and between the leading gap and a 16-19 kG magnetic layer in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.

Abstract translation: 公开了一种PMR写入器，其中在侧面屏蔽之间的间隙层和10-16kG磁性层之间以及在前导间隙和第二磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS） 一个16-19 kG的磁屏蔽层，在保持写入能力的同时提高Hy_grad和Hy_grad_x。 HS为10至100nm厚，并且具有面向高度≤0.15微米的写极的第一面和面向主极扩张侧的第二面，其可延伸至≤0.5微米的全侧屏蔽高度。 第一和第二侧可以形成连续曲线或双锥形设计，其中第一和第二侧相对于中心平面具有不同的角度。 本文所述的侧面屏蔽设计对于20-60nm的侧面间隙特别有利。

公开(公告)号：US09767834B1

公开(公告)日：2017-09-19

申请号：US15074071

申请日：2016-03-18

Applicant: TDK Corporation

Inventor： Tetsuya Hiraki ,  Minoru Ota ,  Hisayoshi Watanabe ,  Takahiko Machita ,  Hideyuki Ukita

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/39 ,  G11B5/3906 ,  G11B5/3932

Abstract: A magnetic head includes a magneto-resistance effect element in the form of a multilayer film, a pair of shields between which the magneto-resistance effect element is interposed in the lamination direction of the layers of the magneto-resistance effect element and each functioning as an electrode, a pair of side shields with one of said side shields on each side of the magneto-resistance effect element in the direction perpendicular to the lamination direction of the magneto-resistance effect element interposed between the pair of shields, the side shields magnetically coupled to either of the pair of shields, and an anisotropy-application layer disposed adjacent to the shield magnetically coupled to the pair of side shields. The pair of shields, the magneto-resistance effect element, and the pair of side shields are exposed on the air bearing surface facing a recording medium. The anisotropy-application layer is not exposed on the air bearing surface and is provided at a position away from the air bearing surface.

公开(公告)号：US09704511B2

公开(公告)日：2017-07-11

申请号：US14539081

申请日：2014-11-12

Applicant: TDK CORPORATION

Inventor： Hideyuki Ukita ,  Kenkichi Anagawa ,  Kei Hirata ,  Atsushi Yamaguchi ,  Ittetsu Kitajima

IPC: G11B5/127 ,  G11B5/31

CPC classification number: G11B5/1278 ,  G11B5/1276 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/315

Abstract: The perpendicular magnetic recording head includes a magnetic pole including a first region and a second region, the first region having a first specific resistance and an end surface exposed on an air bearing surface, the second region having a second specific resistance higher than the first specific resistance and being located at a position recessed from the air bearing surface.

公开(公告)号：US08896974B2

公开(公告)日：2014-11-25

申请号：US13853293

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Shohei Kawasaki ,  Shuji Okame ,  Takayasu Kanaya ,  Satoshi Miura ,  Kenzo Makino ,  Takumi Yanagisawa ,  Takahiko Machita ,  Masashi Sano ,  Hideyuki Ukita

IPC: G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract translation: 薄膜磁头包括自旋阀膜，其包括磁化自由层，磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层，以及设置在两者的一对侧层 自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。 每个侧层具有偏置磁场施加层，该偏置磁场施加层包括软磁性层，并且在轨道宽度方向上向磁化自由层施加偏置磁场，并且位于自旋阀膜与偏置之间的间隙层 磁场施加层，并且侧层至少在磁化钉扎层附近具有压应力。

公开(公告)号：US09792934B2

公开(公告)日：2017-10-17

申请号：US15059383

申请日：2016-03-03

Applicant: TDK Corporation

Inventor： Tetsuya Hiraki ,  Minoru Ota ,  Hisayoshi Watanabe ,  Kenzo Makino ,  Hideyuki Ukita

IPC: G11B5/39 ,  G11B5/11

CPC classification number: G11B5/3912 ,  G11B5/112 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3951 ,  G11B5/3977

Abstract: A multi reader head has a plurality of readers that are laminated via a gap layer(s), and each of the readers has a structure in which a current-perpendicular-to-plane (CPP) type of magneto-resistive effect element, where a current flows along the lamination direction, is interposed between a pair of shields that function as an electrode, respectively, from both sides in the lamination direction. The shields that are opposed from each other via the gap layer of the readers that are adjacent in the lamination direction by a distance that is not constant, but include a portion with a greater distance between the shields and another portion with a smaller distance between the shields are included. The portion with a greater distance between the shields is situated at a position away from the center on an air bearing surface opposing to a recording medium in the magneto-resistive effect element.

公开(公告)号：US09361912B1

公开(公告)日：2016-06-07

申请号：US14690693

申请日：2015-04-20

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/187 ,  G11B5/39 ,  G11B5/31 ,  G11B5/008 ,  G11B5/127 ,  G11B5/11

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a side gap and a 10-16 kG magnetic layer in the side shields, and between a 16-19 kG magnetic layer and the leading gap in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or the a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.

Abstract translation: 公开了一种PMR写入器，其中在侧面间隙和侧面屏蔽中的10-16kG磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS），并且在16-19 kG磁性层和前盾的领先缺口，在保持写入能力的同时提高Hy_grad和Hy_grad_x。 HS为10至100nm厚，并且具有面向写入极的第一侧，高度为＆lt; nlE; 0.15微米，以及面向主极扩张侧的第二面，其可延伸至全侧屏蔽高度＆lt; 微米。 第一和第二侧可以形成连续曲线或双锥形设计，其中第一和第二侧相对于中心平面具有不同的角度。 本文所述的侧面屏蔽设计对于20-60nm的侧面间隙特别有利。

公开(公告)号：US08817417B2

公开(公告)日：2014-08-26

申请号：US13727341

申请日：2012-12-26

Applicant: TDK Corporation

Inventor： Hideyuki Ukita ,  Kenta Hara ,  Kenkichi Anagawa ,  Yosuke Antoku ,  Masashi Sano ,  Shuji Okame ,  Masaya Kato

IPC: G11B5/245 ,  G11B5/39 ,  G11B5/235

CPC classification number: G11B5/1278 ,  G11B5/235 ,  G11B5/3116 ,  G11B5/315

Abstract: A trailing shield is provided on a trailing side of a magnetic pole with a non-magnetic gap layer in between, and an intermediate layer having negative uniaxial magnetocrystalline anisotropy is provided between the non-magnetic gap layer and the trailing shield. The intermediate layer has a magnetic property in which an easy axis of magnetization is provided in an in-plane direction and thus magnetization is likely to occur in that direction, whereas a difficult axis of magnetization is provided in a direction intersecting the in-plane direction and thus magnetization is less likely to occur in that direction. Accordingly, magnetic flux becomes difficult to excessively flow from the magnetic pole into the trailing shield.

Abstract translation: 尾部屏蔽设置在磁极的后侧，其间具有非磁隙层，并且在非磁隙层和后屏蔽之间设置具有负单轴结晶各向异性的中间层。 中间层具有磁特性，其中容易的磁化轴在面内方向上提供，因此可能在该方向上发生磁化，而在与面内方向交叉的方向上提供难度的磁化轴 因此磁化不太可能在该方向上发生。 因此，磁通变得难以从磁极过渡到后挡板。