公开(公告)号：US11069483B2

公开(公告)日：2021-07-20

申请号：US16141031

申请日：2018-09-25

Applicant: TDK Corporation

Inventor： Hiroshi Takasaki ,  Masahiro Hiraoka ,  Hitoshi Saita

IPC: H01G4/008 ,  H01G4/12 ,  H01G4/33

Abstract: A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

公开(公告)号：US10529495B2

公开(公告)日：2020-01-07

申请号：US15725571

申请日：2017-10-05

Applicant: TDK CORPORATION

Inventor： Hiroshi Takasaki ,  Masahiro Hiraoka ,  Hitoshi Saita ,  Kenichi Yoshida

IPC: H01G4/33 ,  H01G4/232 ,  H01G4/005 ,  H01G4/40 ,  H01G7/06 ,  H01L49/02 ,  H01G4/30 ,  H01G4/012 ,  H01G4/12

Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

公开(公告)号：US10943738B2

公开(公告)日：2021-03-09

申请号：US16359149

申请日：2019-03-20

Applicant: TDK Corporation

Inventor： Masahiro Hiraoka ,  Hiroshi Takasaki ,  Hitoshi Saita

IPC: H01G4/33 ,  C23C14/34 ,  H01G4/008 ,  H01G4/12

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

公开(公告)号：US11651895B2

公开(公告)日：2023-05-16

申请号：US17536319

申请日：2021-11-29

Applicant: TDK Corporation

Inventor： Suguru Andoh ,  Hiroshi Takasaki ,  Hitoshi Saita

IPC: H01G4/015 ,  H01G4/33

CPC classification number: H01G4/015 ,  H01G4/33

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

公开(公告)号：US11443900B2

公开(公告)日：2022-09-13

申请号：US17166528

申请日：2021-02-03

Applicant: TDK Corporation

Inventor： Masahiro Hiraoka ,  Hiroshi Takasaki ,  Hitoshi Saita

IPC: H01G4/33 ,  C23C14/34 ,  H01G4/008 ,  H01G4/12

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.