公开(公告)号：US20140320244A1

公开(公告)日：2014-10-30

申请号：US14257541

申请日：2014-04-21

Applicant: TDK CORPORATION

Inventor： Ryuji HASHIMOTO ,  Kenichi SUZUKI ,  Kyung-Kun CHOI

IPC: H01F1/057

CPC classification number: H01F1/057 ,  H01F10/126

Abstract: The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystallizing layer and (Y, La)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y, La)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y, La)-T-B based crystallizing layer can be obtained. Further, the lattice distortion in the total stacked structure is moderated by setting the rare earth elements in the (Y, La)-T-B based crystallizing layer as both of Y and La, and a high residual flux density can be obtained accordingly.

Abstract translation: 本发明提供一种与现有的R-T-B系永久磁铁相比，其磁特性不会显着降低且温度特性优异的永磁体。 在基于R-T-B的结构中，可以通过交替堆叠R1-T-B和（Y，La）-T-B来形成R1-T-B系结晶层和（Y，La）-T-B系结晶层的层叠结构。 以这种方式，可以保持基于（Y，La）-T-B的结晶层的温度系数提高的R1-T-B系结晶层的高磁各向异性场。 此外，通过将（Y，La）-T-B系结晶层中的稀土元素设定为Y和La两者，可以缓和总堆叠结构中的晶格畸变，并且可以相应地获得高剩余磁通密度。