公开(公告)号：US20240021352A1

公开(公告)日：2024-01-18

申请号：US18267210

申请日：2021-12-14

申请人： Miba eMobility GmbH

发明人： Werner PESSENHOFER

IPC分类号： H01F10/12 ,  G01D5/14 ,  H01F41/14

CPC分类号： H01F10/126 ,  G01D5/145 ,  H01F41/14

摘要： A magnetic signal device for measuring the movement and/or the position of a component of a drive machine has a supporting structure and a hard-magnetic layer applied on the supporting structure, wherein the hard-magnetic layer is applied via hollow cathode flow sputtering and/or electroplating and/or PVD and/or CVD and/or plasma spraying and x % by mass of the hard-magnetic layer consist of NdFeB and/or Co5Sm and/or Co2Sm17 and/or Co5Sm and/or Co2Sm17 and the hard-magnetic layer has a magnetic remanence of 0.3 T to 1.3 T in its scanning region.

公开(公告)号：US20180040404A1

公开(公告)日：2018-02-08

申请号：US15784975

申请日：2017-10-16

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Hidefumi KISHIMOTO ,  Noritsugu SAKUMA ,  Masao YANO ,  Weibin CUI ,  Yukiko TAKAHASHI ,  Kazuhiro HONO

IPC分类号： H01F7/02 ,  C22C38/00 ,  H01F10/12 ,  H01F1/03

CPC分类号： H01F7/02 ,  C22C38/005 ,  H01F1/0311 ,  H01F10/126

摘要： The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd2Fe14B, a soft magnetic phase contains Fe or Fe2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd2Fe14B.

公开(公告)号：US20140320244A1

公开(公告)日：2014-10-30

申请号：US14257541

申请日：2014-04-21

申请人： TDK CORPORATION

发明人： Ryuji HASHIMOTO ,  Kenichi SUZUKI ,  Kyung-Kun CHOI

IPC分类号： H01F1/057

CPC分类号： H01F1/057 ,  H01F10/126

摘要： The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystallizing layer and (Y, La)-T-B based crystallizing layer can be formed by alternatively stacking R1-T-B and (Y, La)-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystallizing layer can be maintained while an improved temperature coefficient of the (Y, La)-T-B based crystallizing layer can be obtained. Further, the lattice distortion in the total stacked structure is moderated by setting the rare earth elements in the (Y, La)-T-B based crystallizing layer as both of Y and La, and a high residual flux density can be obtained accordingly.

摘要翻译： 本发明提供一种与现有的R-T-B系永久磁铁相比，其磁特性不会显着降低且温度特性优异的永磁体。 在基于R-T-B的结构中，可以通过交替堆叠R1-T-B和（Y，La）-T-B来形成R1-T-B系结晶层和（Y，La）-T-B系结晶层的层叠结构。 以这种方式，可以保持基于（Y，La）-T-B的结晶层的温度系数提高的R1-T-B系结晶层的高磁各向异性场。 此外，通过将（Y，La）-T-B系结晶层中的稀土元素设定为Y和La两者，可以缓和总堆叠结构中的晶格畸变，并且可以相应地获得高剩余磁通密度。

公开(公告)号：US20140312523A1

公开(公告)日：2014-10-23

申请号：US14362834

申请日：2012-10-22

申请人： NISSAN MOTOR CO., LTD.

发明人： Yoshio Kawashita ,  Kazuhiko Takashima ,  Toshikazu Nanbu

IPC分类号： H01F1/01 ,  H01F41/16

CPC分类号： H01F1/01 ,  B22F3/115 ,  B22F5/006 ,  B22F7/04 ,  C22C38/00 ,  C22C38/001 ,  C22C38/002 ,  C22C38/005 ,  C22C38/06 ,  C22C38/10 ,  C22C38/12 ,  C23C24/04 ,  H01F1/059 ,  H01F10/126 ,  H01F41/16 ,  Y10T428/12014

摘要： A thick magnet film contains a rare earth magnet phase represented by formula R-M-X, where R contains at least one of Nd and Sm, M contains at least one of Fe and Co, and X contains at least one of N and B. The thick magnet film has a density of equal to or more than 80% but less than 95% of the theoretical density when R contains Nd as a main component and has the density of equal to or more than 80% but less than 97% of the theoretical density when R contains Sm as a main component. The magnet can achieve an increase in thickness when formed into a film, an increase in density and an improvement in magnetic properties such as residual magnetic flux density.

摘要翻译： 厚磁体膜包含由式RMX表示的稀土磁体相，其中R包含Nd和Sm中的至少一种，M包含Fe和Co中的至少一种，X包含N和B中的至少一种。厚磁体 当R含有Nd作为主要成分并且具有等于或大于理论密度的80％但小于97％的密度时，膜的密度等于或大于理论密度的80％但小于95％ 当R含有Sm作为主要成分时。 当形成膜时，磁体可以实现厚度的增加，密度的增加以及诸如剩余磁通密度的磁性能的改善。

公开(公告)号：US20130248754A1

公开(公告)日：2013-09-26

申请号：US13824572

申请日：2011-05-13

申请人： Noritsugu Sakuma ,  Hidefumi Kishimoto ,  Akira Kato ,  Tetsuya Shoji ,  Dominique Givord ,  Nora Dempsey ,  Thomas George Woodcock ,  Oliver Gutfleisch ,  Gino Hrkac ,  Thomas Schrefl

发明人： Noritsugu Sakuma ,  Hidefumi Kishimoto ,  Akira Kato ,  Tetsuya Shoji ,  Dominique Givord ,  Nora Dempsey ,  Thomas George Woodcock ,  Oliver Gutfleisch ,  Gino Hrkac ,  Thomas Schrefl

IPC分类号： H01F41/00 ,  H01F1/01

CPC分类号： H01F41/00 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  B22F2999/00 ,  C22C38/002 ,  C22C38/005 ,  C22C38/06 ,  C22C38/16 ,  C22C2202/02 ,  H01F1/01 ,  H01F1/0576 ,  H01F1/0577 ,  H01F10/126 ,  H01F41/005 ,  H01F41/0273 ,  H01F41/32 ,  B22F9/08 ,  B22F1/0055 ,  B22F3/10 ,  B22F3/24 ,  B22F1/0044 ,  B22F3/105

摘要： The method of the present invention produces a rare earth magnet, which is represented by a neodymium magnet (Nd2Fe14B) and neodymium magnet films with applications in micro-systems, by using a heat treatment method capable of enhancing the magnetic characteristics, particularly the magnetic coercive force. A method for producing a rare earth magnet, comprising: (a) quenching a molten metal having a rare earth magnet composition to form quenched flakes of nanocrystalline structure; sintering the quenched flakes; subjecting the sintered body obtained to an orientation treatment; and applying a heat treatment with pressurization at a temperature sufficiently high to enable diffusion or fluidization of a grain boundary phase and at the same time, low enough to prevent coarsening of the crystal grains. (b) thick films deposited on a substrate, applying an annealing to crystallize with pressurization at a temperature sufficiently high to enable diffusion or fluidization of a grain boundary phase and, at the same time, low enough to prevent coarsening of the crystal grains. Preferably, an element capable of lowering the temperature at which the grain boundary phase can be diffused or fluidized, is added to the rare earth magnet composition.

摘要翻译： 本发明的方法通过使用能够增强磁特性，特别是磁矫顽力的热处理方法来生产由钕磁体（Nd2Fe14B）和钕磁体薄膜表示的稀土磁体，其应用在微系统中 力。 一种稀土类磁体的制造方法，其特征在于，包括：（a）使具有稀土类磁铁组合物的熔融金属淬火，形成骤冷的纳米晶体结构的片状物; 烧结淬火片; 对获得的烧结体进行取向处理; 在足够高的温度下进行加压热处理，使晶界相扩散或流化，同时低至足以防止晶粒粗大化。 （b）沉积在基板上的厚膜，施加退火以在足够高的温度下加压结晶，以使晶界相扩散或流化，同时足够低以防止晶粒粗化。 优选地，能够将能够使晶界相扩散或流化的温度降低的元素添加到稀土类磁体组合物中。

公开(公告)号：US08456896B2

公开(公告)日：2013-06-04

申请号：US13165782

申请日：2011-06-21

申请人： Michiya Yamada ,  Yasushi Ogimoto

发明人： Michiya Yamada ,  Yasushi Ogimoto

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/126 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic memory element having a memory cell of size 4F2 is provided that realizes a crosspoint-type memory. In the magnetic memory element, a first magnetic layer, a third magnetic layer (spin polarization enhancement layer), an intermediate layer, a fourth magnetic layer (spin polarization enhancement layer), and a second magnetic layer are stacked in order. The intermediate layer is made of an insulating material or a nonmagnetic material. The second magnetic layer is composed of a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer is composed of a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.

摘要翻译： 提供具有尺寸为4F2的存储单元的磁存储元件，其实现交叉点型存储器。 在磁存储元件中，按顺序堆叠第一磁性层，第三磁性层（自旋极化增强层），中间层，第四磁性层（自旋极化增强层）和第二磁性层。 中间层由绝缘材料或非磁性材料制成。 第二磁性层由钆，铁和钴的三元合金，钆和钴的二元合金或铽和钴的二元合金组成。 或者，第一磁性层由铽，铁和钴的三元合金或铽和钴的二元合金构成。

公开(公告)号：US20130049909A1

公开(公告)日：2013-02-28

申请号：US13220737

申请日：2011-08-30

申请人： Sean Michael Sweeney

发明人： Sean Michael Sweeney

IPC分类号： H01F7/02 ,  B05D1/00 ,  B05D1/02 ,  B05D5/00

CPC分类号： H01F1/0577 ,  H01F10/126 ,  H01F41/0266

摘要： A magnet is disclosed. The magnet includes a plurality of layers such that a first layer includes a ferromagnetic material comprising iron and a rare earth element; and a second layer includes an alkaline earth metal fluoride and a rare earth oxide. A method of preparing a magnet and an article including the magnet are disclosed. The method includes disposing a first layer including a ferromagnetic material and disposing a second layer over the first layer.

公开(公告)号：US08169817B2

公开(公告)日：2012-05-01

申请号：US12715699

申请日：2010-03-02

申请人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

发明人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

公开(公告)号：US20110128106A1

公开(公告)日：2011-06-02

申请号：US12929487

申请日：2011-01-28

申请人： Katsuhiko Mori ,  Ryoji Nakayama ,  Muneaki Watanabe ,  Koichiro Morimoto ,  Tetsurou Tayu ,  Yoshio Kawashita ,  Makoto Kano

发明人： Katsuhiko Mori ,  Ryoji Nakayama ,  Muneaki Watanabe ,  Koichiro Morimoto ,  Tetsurou Tayu ,  Yoshio Kawashita ,  Makoto Kano

IPC分类号： H01F7/02

CPC分类号： H01F1/0572 ,  C22C38/005 ,  C22C38/10 ,  H01F1/0573 ,  H01F10/126 ,  H01F41/0266 ,  Y10T428/32 ,  Y10T428/325

摘要： This rare earth magnet having high strength and high electrical resistance has a structure including an R—Fe—B-based rare earth magnet particles 18 which are enclosed with a high strength and high electrical resistance composite layer 12. The high strength and high electrical resistance composite layer 12 is constituted from a glass-based layer 16 that has a structure comprising a glass phase or R oxide particles 13 dispersed in glass phase, and R oxide particle-based mixture layers 17 that are formed on both sides of the glass-based layer 16 and contain an R-rich alloy phase 14 which contains 50 atomic % or more of R in the grain boundary of the R oxide particles.

摘要翻译： 这种具有高强度和高电阻的稀土磁体具有包含用高强度和高电阻复合层12包围的R-Fe-B系稀土磁体颗粒18的结构。高强度和高电阻 复合层12由具有分散在玻璃相中的玻璃相或R氧化物粒子13的结构的玻璃基层16和形成在玻璃基的两面的R氧化物粒子系混合层17构成 层16，并且含有在R氧化物粒子的晶界中含有50原子％以上的R的富R相合金相14。

公开(公告)号：US07803470B2

公开(公告)日：2010-09-28

申请号：US11724458

申请日：2007-03-14

申请人： Kenji Ikeda

发明人： Kenji Ikeda

IPC分类号： G11B5/64

CPC分类号： H01F10/3222 ,  B82Y25/00 ,  H01F10/007 ,  H01F10/126 ,  H01F10/16 ,  H01F10/3231 ,  H05K9/0088 ,  Y10T428/25 ,  Y10T428/265 ,  Y10T428/32 ,  Y10T428/325

摘要： One inventive aspect relates to a high-frequency magnetic thin film capable of working in a GHz-level band, and an electronic device comprising the film. The film comprises a magnetic layer and an insulating layer that are laminated alternately. The magnetic layer includes a first magnetic layer and a second magnetic layer. The first magnetic layer has a higher anisotropic magnetic field than the second magnetic layer, and the second magnetic layer has a higher saturation magnetization than the first magnetic layer.

摘要翻译： 本发明的一个方面涉及能够在GHz级频带工作的高频磁性薄膜以及包括该薄膜的电子设备。 膜包括交替层叠的磁性层和绝缘层。 磁性层包括第一磁性层和第二磁性层。 第一磁性层具有比第二磁性层高的各向异性磁场，并且第二磁性层具有比第一磁性层更高的饱和磁化强度。