公开(公告)号：US20150123755A1

公开(公告)日：2015-05-07

申请号：US14532533

申请日：2014-11-04

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Masashi SAHASHI

IPC: H01F7/06

CPC classification number: G11C11/1677 ,  G11B5/012 ,  G11B5/02 ,  G11B5/65 ,  G11B5/66 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/3272 ,  H01F10/3286

Abstract: A magnetization controlling element includes a ferromagnetic material layer, an exchange coupling adjustment layer, an antiferromagnetic material layer, an electrode layer, a magnetic field applying mechanism which applies a magnetic field to the antiferromagnetic material layer, and an electric field applying mechanism which applies an electric field to the antiferromagnetic material layer. The antiferromagnetic material layer contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect, the ferromagnetic material layer includes a perpendicular magnetization film having a magnetization component perpendicular to the film surface, the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer. The exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer.

Abstract translation: 磁化控制元件包括铁磁材料层，交换耦合调节层，反铁磁材料层，电极层，向反铁磁材料层施加磁场的磁场施加机构，以及施加机构 电场到反铁磁材料层。 反铁磁材料层含有具有磁电效应的反铁磁材料或铁磁材料，铁磁材料层包括具有垂直于膜表面的磁化分量的垂直磁化膜，铁磁材料层包括磁性连接的铁磁材料层，通过 交换耦合到反铁磁材料层。 交换耦合调整层具有调节铁磁材料层和反铁磁材料层之间的交换耦合的功能。