公开(公告)号：US20240290822A1

公开(公告)日：2024-08-29

申请号：US18025812

申请日：2022-10-11

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA

IPC: H01G5/16

CPC classification number: H01L28/60

Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.

公开(公告)号：US20210349693A1

公开(公告)日：2021-11-11

申请号：US17281021

申请日：2018-10-11

Applicant: TDK CORPORATION

Inventor： Kuniyasu ITO ,  Tatsuo SHIBATA

IPC: G06F7/544 ,  G06F7/523 ,  G06F7/50 ,  G06N3/063

Abstract: A multiply-accumulate calculation device includes: multiple calculation units which generates output signals by multiplying an input signal corresponding to an input value and having a rising part, a signal part, and a falling part by a weight, and output the output signals; an accumulate calculation unit configured to calculate a sum of the output signals output from the plurality of multiple calculation units; and a correction unit configured to execute correction processing for correcting the sum of the output signals on the basis of a correction value including at least one of a first value incorporated into the sum by a current flowing into variable resistors of the multiple calculation units due to the rising part of the input signal, and a second value incorporated into the sum by a current flowing into the variable resistors of the multiple calculation units due to the falling part of the input signal.

公开(公告)号：US20210104662A1

公开(公告)日：2021-04-08

申请号：US17124643

申请日：2020-12-17

Applicant: TDK CORPORATION

Inventor： Minoru OTA ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

公开(公告)号：US20190333558A1

公开(公告)日：2019-10-31

申请号：US16328696

申请日：2018-01-12

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA

IPC: G11C11/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetic domain wall displacement type magnetic recording element including a first ferromagnetic layer including a ferromagnetic material, a magnetic recording layer configured to extend in a first direction crossing a laminating direction of the first ferromagnetic layer and including a magnetic domain wall, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the magnetic recording layer, wherein the first ferromagnetic layer has a magnetic flux supply region at least at a first end in the first direction.

公开(公告)号：US20190189516A1

公开(公告)日：2019-06-20

申请号：US16328692

申请日：2017-12-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.

公开(公告)号：US20180102475A1

公开(公告)日：2018-04-12

申请号：US15718458

申请日：2017-09-28

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H03B15/00 ,  H03H11/04 ,  H01F10/00 ,  H01F10/32 ,  H01F1/147 ,  G01R33/09

CPC classification number: H01L43/08 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01F1/147 ,  H01F10/002 ,  H01F10/3218 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H2/001 ,  H03H11/04

Abstract: A variable-frequency magnetoresistive effect element includes a magnetoresistive effect element, a magnetic-field applying mechanism that applies a magnetic field to the magnetoresistive effect element, an electric-field applying mechanism that applies an electric field to the magnetoresistive effect element, and a control terminal connected to the electric-field applying mechanism and used for applying a voltage that varies in at least one of magnitude and polarity to the electric-field applying mechanism. The magnetoresistive effect element contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect. A spin torque oscillation frequency or spin torque resonance frequency of the magnetoresistive effect element is controlled by varying the voltage applied via the control terminal in at least one of magnitude and polarity.

公开(公告)号：US20240347252A1

公开(公告)日：2024-10-17

申请号：US18034466

申请日：2022-06-09

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA

IPC: H01F10/32 ,  H01F17/00

CPC classification number: H01F10/3254 ,  H01F17/00

Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.

公开(公告)号：US20240237547A9

公开(公告)日：2024-07-11

申请号：US18271550

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10N50/20 ,  H10B61/22 ,  H10N50/01 ,  H10N50/80

Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

公开(公告)号：US20220188618A1

公开(公告)日：2022-06-16

申请号：US17507561

申请日：2021-10-21

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: G06N3/063 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  G11C11/54

Abstract: This neuromorphic device including: a first element group; and a second element group, in which each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements, each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

公开(公告)号：US20220109102A1

公开(公告)日：2022-04-07

申请号：US17488436

申请日：2021-09-29

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G01R33/09 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.