公开(公告)号：US10964879B2

公开(公告)日：2021-03-30

申请号：US15800873

申请日：2017-11-01

Applicant: TDK CORPORATION

Inventor： Katsuyuki Kurachi ,  Hitoshi Sakuma ,  Yasuhiro Aida ,  Kazuhiko Maejima ,  Mayumi Nakajima

IPC: H01L41/08 ,  H01L41/312 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H01L41/35 ,  H01L41/311 ,  C30B23/02 ,  H01L49/02

Abstract: A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.