公开(公告)号：US20230280296A1

公开(公告)日：2023-09-07

申请号：US18176414

申请日：2023-02-28

Applicant: TDK CORPORATION

Inventor： Nishit GOEL ,  Stephen BART ,  Raitaro MASAOKA ,  Kazutaka FUJITA ,  Tomokazu ISHIKURA

IPC: G01N27/12

CPC classification number: G01N27/128

Abstract: A sensor including a micro-bridge structure, wherein the micro-bridge structure comprises a concave geometry, a first electrode on a surface of the micro-bridge structure, a second electrode on the surface of the micro-bridge structure, and a chemical sensing material coupled to the micro-bridge structure overlying the first electrode and the second electrode and exposed to an environment. The chemical sensing material overlays the first electrode and the second electrode and is within the concave geometry of the micro-bridge structure such that the chemical sensing material settles into the concave geometry of the micro-bridge structure during fabrication of the sensor, and wherein the chemical sensing material has an electrical resistance responsive to a concentration of gas in the environment.

公开(公告)号：US20230140545A1

公开(公告)日：2023-05-04

申请号：US17978429

申请日：2022-11-01

Applicant: TDK CORPORATION

Inventor： Mayumi TAKAHASHI ,  Kotaro TERAO ,  Raitaro MASAOKA

IPC: G01N27/60 ,  G01N33/00

Abstract: A gas sensor includes a quartz crystal unit and a sensitive layer formed on the quartz crystal unit and configured to adsorb a gas to be detected, wherein the sensitive layer is porous, and has a particle skeleton made of a plurality of conductive polymer particles and a polyelectrolyte that is at least partially disposed between the adjacent conductive polymer particles.

公开(公告)号：US20240159700A1

公开(公告)日：2024-05-16

申请号：US17984758

申请日：2022-11-10

Applicant: TDK CORPORATION

Inventor： Tomokazu ISHIKURA ,  Kazutaka FUJITA ,  Raitaro MASAOKA

IPC: G01N27/12

CPC classification number: G01N27/125

Abstract: A metal oxide semiconductor gas sensor includes a first electrode, a second electrode, and a sensing layer in contact with the first electrode and the second electrode. The sensing layer includes SnO2 and WO3. A cross section of the sensing layer has an average porosity of 16.0% or more and 22.0% or less. SnO2 occupies 60 vol % or more and 80 vol % or less and WO3 occupies 20 vol % or more and 40 vol % or less in the sensing layer provided that pores are not counted as part of the sensing layer.

公开(公告)号：US20230243769A1

公开(公告)日：2023-08-03

申请号：US17957051

申请日：2022-09-30

Applicant: TDK CORPORATION

Inventor： Yukiko MORIIZUMI ,  Raitaro MASAOKA

IPC: G01N27/12 ,  G01N29/02

CPC classification number: G01N27/126 ,  G01N29/022 ,  G01N2291/0257 ,  G01N2027/222

Abstract: A polymer material is contained in a sensing film of a sensor element having a quartz plate, an electrode made of a metal film provided on the quartz plate, and a sensing film provided on the electrode, and has a structural unit that contains one or more ethylene unsaturated bonds and is originated from a compound containing one or more functional groups reactive to a gas.

公开(公告)号：US20220324721A1

公开(公告)日：2022-10-13

申请号：US17678086

申请日：2022-02-23

Applicant: TDK CORPORATION

Inventor： Tomokazu ISHIKURA ,  Raitaro MASAOKA

IPC: C01G49/00 ,  G01N27/12 ,  G01N33/00

Abstract: A sensing material for detecting hydrogen sulfide capable of detecting hydrogen sulfide even having a low concentration, a hydrogen sulfide-sensitive layer containing the sensing material for detecting hydrogen sulfide, and a metal oxide semiconductor-type gas sensor having the hydrogen sulfide-sensitive layer are provided. The sensing material for detecting hydrogen sulfide includes CuFe2O4-type complex oxide (W). The CuFe2O4-type complex oxide (W) contains, as a main component (W1), 35.0 to 49.5 mol % of iron oxide in terms of Fe2O3 and 50.5 to 65 mol % of copper oxide in terms of CuO, and an average particle diameter of particles is 3 μm or less.