公开(公告)号：US20170040092A1

公开(公告)日：2017-02-09

申请号：US15222050

申请日：2016-07-28

Applicant: TDK CORPORATION

Inventor： Kazutaka FUJITA ,  Kazuhiko ITOH ,  Yoshikazu SHIMURA

IPC: H01C7/02 ,  H01C1/14

CPC classification number: H01C7/027 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/6263 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3253 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/602 ,  C04B2235/606 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/658 ,  C04B2235/79 ,  C04B2235/9607 ,  H01C1/1406 ,  H01C7/025

Abstract: A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. (BavBixAyREw)m(TiuTMz)O3   (1) (wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.) 0.01≦x≦0.15   (2) x≦y≦0.3   (3) 0≦(w+z)≦0.01   (4) v+x+y+w=1   (5) u+z=1   (6) 0.950≦m≦1.050   (7) further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

Abstract translation: 此外，含有0.001mol〜0.055mol的Ca，Na /（Na + K）的比例为0.1以上且小于1。

公开(公告)号：US20170226018A1

公开(公告)日：2017-08-10

申请号：US15422087

申请日：2017-02-01

Applicant: TDK CORPORATION

Inventor： Kazutaka FUJITA ,  Kazuhiko ITOH ,  Yoshikazu SHIMURA ,  Hiroki MORIKOSHI ,  Tomohiro TERADA

IPC: C04B35/495 ,  H01C7/02 ,  H01C1/14

CPC classification number: C04B35/495 ,  C04B35/462 ,  C04B35/4682 ,  C04B35/62615 ,  C04B35/6263 ,  C04B35/62645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3268 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/79 ,  C04B2235/9607 ,  H01C1/14 ,  H01C7/02 ,  H01C7/025

Abstract: A semiconductor ceramic composition represented by formula (1), (BavBixAyREw)m(TiuTMz)O3  (1), wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; 0.750y≦x≦1.50y  (2), 0.007≦y≦0.125  (3), 0≦(w+z)≦0.010  (4), v+x+y+w=1  (5), u+z=1  (6), 0.950≦m≦1.050  (7), 0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

公开(公告)号：US20230280296A1

公开(公告)日：2023-09-07

申请号：US18176414

申请日：2023-02-28

Applicant: TDK CORPORATION

Inventor： Nishit GOEL ,  Stephen BART ,  Raitaro MASAOKA ,  Kazutaka FUJITA ,  Tomokazu ISHIKURA

IPC: G01N27/12

CPC classification number: G01N27/128

Abstract: A sensor including a micro-bridge structure, wherein the micro-bridge structure comprises a concave geometry, a first electrode on a surface of the micro-bridge structure, a second electrode on the surface of the micro-bridge structure, and a chemical sensing material coupled to the micro-bridge structure overlying the first electrode and the second electrode and exposed to an environment. The chemical sensing material overlays the first electrode and the second electrode and is within the concave geometry of the micro-bridge structure such that the chemical sensing material settles into the concave geometry of the micro-bridge structure during fabrication of the sensor, and wherein the chemical sensing material has an electrical resistance responsive to a concentration of gas in the environment.

公开(公告)号：US20240159700A1

公开(公告)日：2024-05-16

申请号：US17984758

申请日：2022-11-10

Applicant: TDK CORPORATION

Inventor： Tomokazu ISHIKURA ,  Kazutaka FUJITA ,  Raitaro MASAOKA

IPC: G01N27/12

CPC classification number: G01N27/125

Abstract: A metal oxide semiconductor gas sensor includes a first electrode, a second electrode, and a sensing layer in contact with the first electrode and the second electrode. The sensing layer includes SnO2 and WO3. A cross section of the sensing layer has an average porosity of 16.0% or more and 22.0% or less. SnO2 occupies 60 vol % or more and 80 vol % or less and WO3 occupies 20 vol % or more and 40 vol % or less in the sensing layer provided that pores are not counted as part of the sensing layer.

公开(公告)号：US20170229219A1

公开(公告)日：2017-08-10

申请号：US15409989

申请日：2017-01-19

Applicant: TDK CORPORATION

Inventor： Kazuhiko ITOH ,  Yoshikazu SHIMURA ,  Kazutaka FUJITA ,  Hiroki MORIKOSHI ,  Tomohiro TERADA

IPC: H01C7/02 ,  H01C1/14 ,  C04B35/645 ,  C04B35/468 ,  C04B35/626

CPC classification number: H01C7/022 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/6264 ,  C04B35/62675 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3268 ,  C04B2235/3298 ,  C04B2235/3436 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/782 ,  C04B2235/784 ,  C04B2235/786 ,  C04B2235/96 ,  H01C1/14 ,  H01C7/025 ,  H01L41/1871

Abstract: A semiconductor ceramic composition which is a BaTiO3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7≦{(the content of Bi)/(the content of A)}≦1.43, 0.017≦{(the content of Bi)+(the content of A)}≦0.25, and 0

公开(公告)号：US20160005517A1

公开(公告)日：2016-01-07

申请号：US14751812

申请日：2015-06-26

Applicant: TDK CORPORATION

Inventor： Yoshikazu SHIMURA ,  Kazuhiko ITOH ,  Kazutaka FUJITA

IPC: H01C7/02 ,  H01C1/14 ,  C04B35/462 ,  H01C7/00

CPC classification number: H01C7/025 ,  C04B35/462 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/79 ,  H01C1/14 ,  H01C7/008 ,  H01C7/02

Abstract: A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is represented by formula, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3   (1), (wherein, A is at least one element from Na or K, RE is at least one element from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element from the group consisting of V, Nb and Ta, and w, x, y, z (each in mol) and the mole ratio m of Ba site to Ti site satisfy the following in equations, 0.007≦x≦0.125   (2) x≦y≦2.0x   (3) 0≦(w+z)≦0.010   (4) 0.940≦m≦0.999   (5)), and further includes Sr in a proportion of 0.010 mol or more and 0.050 mol or less relative to 1 mol of Ti site, and the mole ratio u of Sr and the mole ratio x of Bi satisfy the following in equation, u≦1.8x−0.008   (6).

Abstract translation: 提供了一种在室温下具有低电阻率和较大的电阻温度系数的半导体陶瓷组合物; 该组成由式（Ba1-xy-wBixAyREw）m（Ti1-zTMz）O3（1）表示，（其中，A是至少一种来自Na或K的元素，RE是至少一种元素， Y，La，Ce，Pr，Nd，Sm，Gd，Dy和Er，TM是由V，Nb和Ta组成的组中的至少一种元素，w，x，y，z（各摩尔） Ba位置与Ti位置的摩尔比m满足下列公式：0.007＆nlE; x＆nlE; 0.125（2）x＆nlE; y＆nlE; 2.0x（3）0＆nlE;（w + z）＆nlE; 0.010（4）0.940＆ ; 0.999（5）），并且还包括相对于1份Ti部位为0.010摩尔以上且0.050摩尔以下的Sr，Sr的摩尔比u和Bi的摩尔比x满足下式 方程，u＆nlE; 1.8x-0.008（6）。