公开(公告)号：US20250006432A1

公开(公告)日：2025-01-02

申请号：US18754832

申请日：2024-06-26

Applicant: TDK CORPORATION

Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA ,  Masahiro HIRAOKA

IPC: H01G4/33

Abstract: A thin film capacitor includes a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer. The thin film capacitor includes an intermediate layer between the dielectric layer and the second electrode layer. The intermediate layer includes at least one stacking unit including a first intermediate layer and a second intermediate layer stacked in contact with the first intermediate layer. The first intermediate layer of the at least one stacking unit closest to the dielectric layer is stacked in contact with the dielectric layer. The first intermediate layer includes a first metal (M1) as a main component. The second intermediate layer includes a second metal (M2), different from the first metal, as a main component.

公开(公告)号：US20230094616A1

公开(公告)日：2023-03-30

申请号：US17954659

申请日：2022-09-28

Applicant: TDK CORPORATION

Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/20

Abstract: A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a