公开(公告)号：US20230094616A1

公开(公告)日：2023-03-30

申请号：US17954659

申请日：2022-09-28

Applicant: TDK CORPORATION

Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/20

Abstract: A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a

公开(公告)号：US20250006432A1

公开(公告)日：2025-01-02

申请号：US18754832

申请日：2024-06-26

Applicant: TDK CORPORATION

Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA ,  Masahiro HIRAOKA

IPC: H01G4/33

Abstract: A thin film capacitor includes a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer. The thin film capacitor includes an intermediate layer between the dielectric layer and the second electrode layer. The intermediate layer includes at least one stacking unit including a first intermediate layer and a second intermediate layer stacked in contact with the first intermediate layer. The first intermediate layer of the at least one stacking unit closest to the dielectric layer is stacked in contact with the dielectric layer. The first intermediate layer includes a first metal (M1) as a main component. The second intermediate layer includes a second metal (M2), different from the first metal, as a main component.

公开(公告)号：US20160217931A1

公开(公告)日：2016-07-28

申请号：US15006366

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi SAITA ,  Hiroyasu INOUE ,  Yoshihiko YANO

IPC: H01G4/33 ,  H01G4/10 ,  H01G4/12 ,  H01G4/012

CPC classification number: H01G4/33 ,  H01G4/1227 ,  H01G4/1236

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

Abstract translation: 薄膜电容器包括基材，设置在基材上的电介质层和设置在电介质层上的上电极层。 电介质层包括相对于上电极层的表面沿法线方向延伸的多个柱状晶体，柱状晶体具有由AyBO 3表示的钙钛矿晶体结构，元素A为Ba，Ca， Sr和Pb，元素B为Ti，Zr，Sn和Hf中的至少一种，y≤0.995，并且每100摩尔AyBO 3的电介质层含有0.05〜2.5摩尔的Al。