公开(公告)号：US20240133834A1

公开(公告)日：2024-04-25

申请号：US18482431

申请日：2023-10-05

Applicant: TDK Corporation

Inventor： Yoshio KAITA ,  Yasuhiro INUI ,  Yutaka MATSUO

IPC: G01N27/12 ,  G01N27/18 ,  G01N33/00

CPC classification number: G01N27/122 ,  G01N27/18 ,  G01N33/004

Abstract: Disclosed herein is a gas sensor that includes a sensor part configured to generate a gas detection signal in accordance with a concentration of a gas to be measured, and a control circuit configured to generate an output signal indicating the concentration of the gas to be measured based on the gas detection signal. The control circuit is configured to correct the output signal so that the output signal indicates a concentration of the gas to be measured higher than that indicated by the gas detection signal when a level of the gas detection signal output from the sensor part is less than a reference value corresponding to a level of the gas detection signal which is normally obtained when a concentration of the gas to be measured is a concentration value in normal time.

公开(公告)号：US20200058804A1

公开(公告)日：2020-02-20

申请号：US16348592

申请日：2018-05-17

Applicant: TDK CORPORATION

Inventor： Jun HIRABAYASHI ,  Yutaka MATSUO ,  Minoru FUJITA ,  Jun ARIMA

IPC: H01L29/872 ,  H01L21/28 ,  H01L29/41 ,  H01L29/47 ,  H01L21/02

Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20. According to the present invention, since the thickness of the semiconductor substrate at a part thereof where forward current flows is selectively reduced, this makes it possible to suppress heat generation and to enhance heat radiation performance while ensuring mechanical strength and handling performance. Thus, even though gallium oxide having a low heat conductivity is used as the material of the semiconductor substrate, a temperature rise of the element can be suppressed.

公开(公告)号：US20240264102A1

公开(公告)日：2024-08-08

申请号：US18433793

申请日：2024-02-06

Applicant: TDK Corporation

Inventor： Sadaharu YONEDA ,  Yutaka MATSUO ,  Yoshio KAITA

IPC: G01N25/18 ,  G01N33/00

CPC classification number: G01N25/18 ,  G01N33/0027

Abstract: Disclosed herein is a gas sensor that includes: a gas sensor part including a thermosensitive element, the gas sensor part being configured to generate a gas detection signal according to a concentration of a gas to be detected; a temperature sensor part configured to generate a temperature detection signal according to environmental temperature; a heater configured to heat the thermosensitive element; and a signal processing circuit configured to: control a heating temperature of the heater according to the temperature detection signal obtained at a first timing; and calculate the concentration of the gas to be detected according to the temperature detection signal obtained at a second timing that is later than the first timing and the gas detection signal obtained at a third timing at which the thermosensitive element is heated by the heater.

公开(公告)号：US20240230570A9

公开(公告)日：2024-07-11

申请号：US18482431

申请日：2023-10-06

Applicant: TDK Corporation

Inventor： Yoshio KAITA ,  Yasuhiro INUI ,  Yutaka MATSUO

IPC: G01N27/12 ,  G01N27/18 ,  G01N33/00

CPC classification number: G01N27/122 ,  G01N27/18 ,  G01N33/004

Abstract: Disclosed herein is a gas sensor that includes a sensor part configured to generate a gas detection signal in accordance with a concentration of a gas to be measured, and a control circuit configured to generate an output signal indicating the concentration of the gas to be measured based on the gas detection signal. The control circuit is configured to correct the output signal so that the output signal indicates a concentration of the gas to be measured higher than that indicated by the gas detection signal when a level of the gas detection signal output from the sensor part is less than a reference value corresponding to a level of the gas detection signal which is normally obtained when a concentration of the gas to be measured is a concentration value in normal time.

公开(公告)号：US20210293735A1

公开(公告)日：2021-09-23

申请号：US17265958

申请日：2019-06-20

Applicant: TDK Corporation

Inventor： Yutaka MATSUO ,  Yoshio KAITA

IPC: G01N27/18

Abstract: A gas sensor includes a first thermistor as a detection element, a second thermistor as a reference element, a first heater for heating the first thermistor, a second heater for heating the second thermistor, and a control circuit that heats the first and second heaters such that the second thermistor has a higher temperature than the first thermistor in a first period of time and that the first thermistor has a higher temperature than the second thermistor in a second period of time.

公开(公告)号：US20210003525A1

公开(公告)日：2021-01-07

申请号：US16649558

申请日：2018-09-05

Applicant: TDK Corporation

Inventor： Yoshio KAITA ,  Yutaka MATSUO

IPC: G01N27/18 ,  G01N27/12 ,  G01N33/00

Abstract: A gas sensor includes: a first thermistor having a resistance value that changes according to a concentration of a first gas with a first sensitivity and changes according to a concentration of a second gas with a second sensitivity; a second thermistor connected in series to the first thermistor, the second thermistor having a resistance value that changes according to a concentration of the first gas with a third sensitivity that is lower than the first sensitivity and changes according to a concentration of the second gas with a fourth sensitivity that is different from the second sensitivity; and a correction resistor connected in parallel with the first or second thermistor.