公开(公告)号：US20230117378A1

公开(公告)日：2023-04-20

申请号：US18067702

申请日：2022-12-17

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED

Inventor： Hossam HAICK ,  Muhammad KHATIB

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

Abstract: A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 µm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.

公开(公告)号：US20220243014A1

公开(公告)日：2022-08-04

申请号：US17613826

申请日：2020-06-04

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED

Inventor： Hossam HAICK ,  Muhammad KHATIB

IPC: C08G75/14 ,  G01L1/22 ,  G01N27/414

Abstract: The present invention provides a solution-processable self-healing hydrolytically stable elastomer, a method for the preparation thereof, and articles of manufacture comprising the elastomer. The elastomer comprises polymeric chains comprising units of formula (A1), wherein R is a polybutadiene-containing polyurethane; R1 and R1′ are independently selected from the group consisting of: —H, (C1-C20)alkyl, (C5-C14)aryl, —OR4, —(CO)R5, —O(CO)R6, —(SO)R7, CO—R8, —COOR9, —NO2, and halogen; R2, R2′, R3 and R3′ are independently selected from the group consisting of: —H, (C1-C20)alkyl, and (C5-C14)aryl; R4 to R9 are the same or different, and are independently selected from the group consisting of: —H, (C1-C20)alkyl, and (C5-C14)aryl; m is 4; wherein the elastomer is dynamically crosslinked by aromatic disulfide metathesis, and wherein the elastomer has a water contact angle of above 100 #.

公开(公告)号：US20210202748A1

公开(公告)日：2021-07-01

申请号：US17268628

申请日：2019-08-20

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED

Inventor： Hossam HAICK ,  Muhammad KHATIB

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/16 ,  H01L29/24 ,  H01L29/66

Abstract: The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.