公开(公告)号：US20150090942A1

公开(公告)日：2015-04-02

申请号：US14500775

申请日：2014-09-29

Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.

Inventor： Boaz POKROY ,  Anastasia BRIF

IPC: H01L29/167 ,  H01L29/24 ,  H01L29/22 ,  H01L29/207 ,  H01L29/227

CPC classification number: C01B19/007 ,  C01G9/02 ,  C01G11/02 ,  C01G21/21 ,  C01P2002/74 ,  C01P2006/40 ,  C07K4/00 ,  C07K9/00 ,  G01N33/588 ,  G01N33/68 ,  H01L29/167 ,  H01L29/207 ,  H01L29/2203 ,  H01L29/227

Abstract: The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.

Abstract translation: 本发明提供一种包含具有调谐带隙能量的半导体材料的半导体晶体及其制备方法。 更具体地说，本发明提供一种半导体晶体，其包含掺入晶格内的半导体材料和氨基酸分子，肽或其组合，其中氨基酸分子，肽或其组合调节半导体的带隙能量 材料。