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公开(公告)号:US3468659A
公开(公告)日:1969-09-23
申请号:US3468659D
申请日:1967-10-11
Applicant: TEXAS INSTRUMENTS INC
Inventor: BELASCO MELVIN , HOWETH BOBBY W , MARTIN DAVID D , WENDE PRICE T
CPC classification number: H01L21/00 , H01L21/242 , H01L29/00 , Y10S148/02
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公开(公告)号:US3435306A
公开(公告)日:1969-03-25
申请号:US3435306D
申请日:1966-11-23
Applicant: TEXAS INSTRUMENTS INC
Inventor: MARTIN DAVID D
IPC: H01L21/306 , H01L23/36 , H01L47/00 , H01L3/00 , H01L5/00
CPC classification number: H01L23/36 , H01L21/30612 , H01L47/00 , H01L2924/0002 , Y10S148/056 , Y10S148/145 , Y10S438/90 , H01L2924/00
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3.Gallium arsenide semiconductor device and contact alloy therefor 失效
Title translation: 砷化镓半导体器件及其接触合金公开(公告)号:US3371255A
公开(公告)日:1968-02-27
申请号:US46258365
申请日:1965-06-09
Applicant: TEXAS INSTRUMENTS INC
Inventor: MELVIN BELASCO , HOWETH BOBBY W , MARTIN DAVID D , WENDE PRICE T
CPC classification number: H01L21/00 , H01L21/242 , H01L29/00 , Y10S148/02
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