公开(公告)号：US3468659A

公开(公告)日：1969-09-23

申请号：US3468659D

申请日：1967-10-11

Applicant: TEXAS INSTRUMENTS INC

Inventor： BELASCO MELVIN ,  HOWETH BOBBY W ,  MARTIN DAVID D ,  WENDE PRICE T

IPC: H01L21/00 ,  H01L21/24 ,  H01L29/00 ,  C22C31/00 ,  H01L3/00

CPC classification number: H01L21/00 ,  H01L21/242 ,  H01L29/00 ,  Y10S148/02

公开(公告)号：US3354365A

公开(公告)日：1967-11-21

申请号：US40743364

申请日：1964-10-29

Applicant: TEXAS INSTRUMENTS INC

Inventor： BELASCO MELVIN ,  MARTIN DAVID DEXTER

IPC: C22C13/00 ,  H01L21/24 ,  H01L29/00 ,  H01L29/207

CPC classification number: H01L29/00 ,  C22C13/00 ,  H01L21/24 ,  H01L29/207 ,  Y10S148/02

公开(公告)号：US3703408A

公开(公告)日：1972-11-21

申请号：US3703408D

申请日：1969-05-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： BELASCO MELVIN ,  BORRELLO SEBASTIAN R

IPC: H01L29/00 ,  H01L31/00 ,  H01L31/18

CPC classification number: H01L31/00 ,  H01L29/00 ,  H01L31/18 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/139 ,  Y10S148/142 ,  Y10S148/157

Abstract: A METAL-SEMICONDUCTOR-METAL PHOTOTRANSISTOR FORMED BY A PAIR OF CLOSELY SPACED, THIN METAL FILMS IN RECTIFYING CONTACT WITH THE SURFACE OF A LIGHTLY DOPED P-TYPE INDIUM ARSENIDE SUBSTRATE. THE SPACING BETWEEN THE METAL FILMS IS SUBSTANTIALLY LESS THAN THE DIFFUSION LENGTH OF MINORITY CARRIER IN THE INDIUM ARSENIDE AT THE OPERATING TEMPERATURE, WHICH IS ON THE ORDER OF -78*C. ONE METAL FILM MAY BE CONSIDERED THE COLLECTOR REGION, THE SEMICONDUCTOR MATERIAL THE BASE REGION, AND THE OTHER METAL FILM THE EMITTER REGION. WHEN THE TRANSISTOR IS BASED LIKE AN NPN TRANSISTOR, THE COLLECTOR CURRENT IS VARIED IN PROPORTION TO THE RADIATION STRIKING THE BASE REGION GENERALLY IN THE SAME MANNER AS A PHOTODIODE, BUT THE CURRENT MODULATION IS MANY TIMES THAT PRODUCED BY A PHOTODIODE FOR A GIVEN RADIATION LEVEL.

公开(公告)号：US3700980A

公开(公告)日：1972-10-24

申请号：US3700980D

申请日：1971-04-08

Applicant: TEXAS INSTRUMENTS INC

Inventor： BELASCO MELVIN ,  BORRELLO SEBASTIAN R

IPC: H01L31/00 ,  H01L31/11 ,  H01L15/00

CPC classification number: H01L31/00 ,  H01L31/11 ,  Y10S257/902

Abstract: Disclosed is a metal-semiconductor-metal phototransistor formed by a pair of closely spaced, thin metal films in rectifying contact with the surface of a lightly doped p-type indium arsenide substrate. The spacing between the metal films is substantially less than the diffusion length of a minority carrier in the indium arsenide at the operating temperature, which is on the order of -78* C. One metal film may be considered the collector region, the semiconductor material the base region, and the other metal film the emitter region. When the transistor is biased like an NPN transistor, the collector current is varied in proportion to the radiation striking the base region generally in the same manner as a photodiode, but the current modulation is many times that produced by a photodiode for a given radiation level.

Abstract translation: 公开了一种金属 - 半导体 - 金属光电晶体管，其通过与轻掺杂的p型砷化铟衬底的表面整流接触的一对紧密间隔的薄金属膜形成。 金属膜之间的间隔基本上小于在砷化砷中的少数载流子在约-78℃的操作温度下的扩散长度。一个金属膜可以被认为是集电极区域，半导体材料 基极区域和另一个金属膜的发射极区域。 当晶体管像NPN晶体管一样被偏置时，集电极电流通常以与光电二极管相同的方式与照射到基极区域的辐射成比例地变化，但是电流调制是对于给定辐射水平由光电二极管产生的多次 。