公开(公告)号：US3626584A

公开(公告)日：1971-12-14

申请号：US3626584D

申请日：1969-07-25

Applicant: TEXAS INSTRUMENTS INC

Inventor： VINCENT BRITTON T JR ,  EARHART CHARLES E

IPC: H01L27/12 ,  H01L49/02 ,  B01J17/00 ,  H01L1/16

CPC classification number: H01L27/12 ,  H01L49/02

Abstract: IN THE DISCLOSED METHOD A MINIATURE HYBRID INTEGRATED CIRCUIT IS FABRICATED BY SELECTIVELY REMOVING PORTIONS OF THE GLAZE FROM A CERAMIC SUBSTRATE TO EXPOSE PORTIONS OF THE SUBSTRATE SURFACE. CIRCUIT COMPONENTS ARE DISPOSED IN THERMAL CONTACT WITH THE EXPOSED PORTIONS AND MAY BE INTERCONNECTED WITH PASSIVE CIRCUIT ELEMENTS SUPPORTED ON THE GLAZE.

公开(公告)号：US3609474A

公开(公告)日：1971-09-28

申请号：US3609474D

申请日：1969-11-10

Applicant: TEXAS INSTRUMENTS INC

Inventor： VINCENT BRITTON T JR

IPC: H01L23/36 ,  H01L23/485 ,  H01L29/00 ,  H01P5/00

CPC classification number: H01L23/485 ,  H01L23/36 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S148/02 ,  Y10S148/085 ,  H01L2924/00

Abstract: Disclosed is a semiconductor device, such as a transistor, including an extended emitter contact with one portion thereof having a small dimension for contact to the emitter region of the device, and another relatively large heat dissipation portion overlying the base region of the transistor for heat sinking purposes. The emitter contact is separated from the base contact by a relatively thick layer of insulation which avoids degrading the electrical parameters of the device.