公开(公告)号：US20170174505A1

公开(公告)日：2017-06-22

申请号：US15447932

申请日：2017-03-02

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Kalin Valeriev LAZAROV ,  Brian E. GOODLIN

IPC: B81B7/00 ,  B81C1/00 ,  H01L27/144

CPC classification number: B81B7/0019 ,  B81B2201/014 ,  B81C1/0038 ,  B81C1/00523 ,  B81C1/0069 ,  B81C1/00801 ,  H01L27/144

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

公开(公告)号：US20190206785A1

公开(公告)日：2019-07-04

申请号：US15898694

申请日：2018-02-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ricky Alan JACKSON ,  Ting-TA YEN ,  Brian E. GOODLIN

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/58 ,  H01L23/532 ,  H01L25/07

CPC classification number: H01L23/49866 ,  H01L23/49838 ,  H01L23/53238 ,  H01L23/562 ,  H01L23/585 ,  H01L24/11 ,  H01L24/12 ,  H01L24/48 ,  H01L25/074

Abstract: An electronic device comprises: a molybdenum layer; a bond pad formed on the molybdenum layer, the bond pad comprising aluminum; and a wire bonded to the bond pad, the wire comprising gold.

公开(公告)号：US20150246810A1

公开(公告)日：2015-09-03

申请号：US14712403

申请日：2015-05-14

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Walter Baker MEINEL ,  Kalin Valeriev LAZAROV ,  Brian E. GOODLIN

IPC: B81C1/00

CPC classification number: B81B7/0019 ,  B81B2201/014 ,  B81C1/0038 ,  B81C1/00523 ,  B81C1/0069 ,  B81C1/00801 ,  H01L27/144

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract translation: 可以通过在覆盖层上形成IR吸收密封层来形成MEMS IR传感器，该MEMS红外传感器在衬底上覆盖覆盖层的空腔和设置在空腔上的上覆层中的温度感测部件，以便覆盖通路孔 到空腔。 密封层可以包括感光材料，并且可以使用光刻工艺对密封层进行图案化以形成IR吸收密封。 或者，可以使用掩模和蚀刻工艺对密封层进行图案化以形成IR吸收密封。