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公开(公告)号：US20200240849A1
公开(公告)日：2020-07-30
申请号：US16852659
申请日：2020-04-20
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver
Abstract: A device having a first terminal region and a second terminal region. The first terminal region includes fine-tune (FT) metal stripes that are separated from each other by a first distance along the longitudinal direction. The second terminal region is spaced apart from the first terminal region by at least an inter-terminal distance. The second terminal region includes coarse-tune (CT) metal stripes that are separated from each other by a second distance along the longitudinal direction. The second distance is greater than the first distance, and the inter-terminal distance greater than the second distance. Each of the FT metal stripes may be selected as a first access location, and each of the CT metal stripes may be selected as a second access location. A pair of selected first and second access locations access a sheet resistance defined by a distance therebetween.
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公开(公告)号：US20190086484A1
公开(公告)日：2019-03-21
申请号：US15709866
申请日：2017-09-20
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver , Iouri Mirgorodski
Abstract: A microelectronic device includes a vertical Hall sensor for measuring magnetic fields in two dimensions. In one implementation, the disclosed microelectronic device involves a vertical Hall plate with a cross-shaped upper terminal and a lower terminal which includes a buried layer. The cross-shaped upper terminal has a length-to-width ratio of 5 to 12 where it contacts the vertical Hall plate. The length is measured from one end of one arm of the cross-shaped upper terminal to an opposite end of an opposite arm. The width is an average width of both arms. Hall sense taps are located outside of the cross-shaped upper terminal. Current returns connect to the buried layer.
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公开(公告)号：US11047746B2
公开(公告)日：2021-06-29
申请号：US16852659
申请日：2020-04-20
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver
Abstract: A device having a first terminal region and a second terminal region. The first terminal region includes fine-tune (FT) metal stripes that are separated from each other by a first distance along the longitudinal direction. The second terminal region is spaced apart from the first terminal region by at least an inter-terminal distance. The second terminal region includes coarse-tune (CT) metal stripes that are separated from each other by a second distance along the longitudinal direction. The second distance is greater than the first distance, and the inter-terminal distance greater than the second distance. Each of the FT metal stripes may be selected as a first access location, and each of the CT metal stripes may be selected as a second access location. A pair of selected first and second access locations access a sheet resistance defined by a distance therebetween.
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Patent Agency Ranking
公开(公告)号：US10534045B2
公开(公告)日：2020-01-14
申请号：US15709866
申请日：2017-09-20
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver , Iouri Mirgorodski
Abstract: A microelectronic device includes a vertical Hall sensor for measuring magnetic fields in two dimensions. In one implementation, the disclosed microelectronic device involves a vertical Hall plate with a cross-shaped upper terminal and a lower terminal which includes a buried layer. The cross-shaped upper terminal has a length-to-width ratio of 5 to 12 where it contacts the vertical Hall plate. The length is measured from one end of one arm of the cross-shaped upper terminal to an opposite end of an opposite arm. The width is an average width of both arms. Hall sense taps are located outside of the cross-shaped upper terminal. Current returns connect to the buried layer.
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公开(公告)号：US20180372511A1
公开(公告)日：2018-12-27
申请号：US15633516
申请日：2017-06-26
Applicant: Texas Instruments Incorporated
Inventor： Byron Jon Roderick Shulver , Dok Won Lee
Abstract: An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.
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公开(公告)号：US10782154B2
公开(公告)日：2020-09-22
申请号：US15633516
申请日：2017-06-26
Applicant: Texas Instruments Incorporated
Inventor： Byron Jon Roderick Shulver , Dok Won Lee
Abstract: An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.
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公开(公告)号：US10663355B2
公开(公告)日：2020-05-26
申请号：US15639492
申请日：2017-06-30
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver
Abstract: A device having a first terminal region and a second terminal region. The first terminal region includes fine-tune (FT) metal stripes that are separated from each other by a first distance along the longitudinal direction. The second terminal region is spaced apart from the first terminal region by at least an inter-terminal distance. The second terminal region includes coarse-tune (CT) metal stripes that are separated from each other by a second distance along the longitudinal direction. The second distance is greater than the first distance, and the inter-terminal distance greater than the second distance. Each of the FT metal stripes may be selected as a first access location, and each of the CT metal stripes may be selected as a second access location. A pair of selected first and second access locations access a sheet resistance defined by a distance therebetween.
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公开(公告)号：US20190003900A1
公开(公告)日：2019-01-03
申请号：US15639492
申请日：2017-06-30
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver
CPC classification number: G01K7/25 , G01K7/023 , G01K7/223 , G01K15/005 , G01K2007/163
Abstract: A device having a first terminal region and a second terminal region. The first terminal region includes fine-tune (FT) metal stripes that are separated from each other by a first distance along the longitudinal direction. The second terminal region is spaced apart from the first terminal region by at least an inter-terminal distance. The second terminal region includes coarse-tune (CT) metal stripes that are separated from each other by a second distance along the longitudinal direction. The second distance is greater than the first distance, and the inter-terminal distance greater than the second distance. Each of the FT metal stripes may be selected as a first access location, and each of the CT metal stripes may be selected as a second access location. A pair of selected first and second access locations access a sheet resistance defined by a distance therebetween.
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