公开(公告)号：US20230146764A1

公开(公告)日：2023-05-11

申请号：US18148312

申请日：2022-12-29

Applicant: Texas Instruments Incorporated

Inventor： Francisco Adolfo CANO ,  Devanathan VARADARAJAN ,  Anthony Martin HILL

IPC: G11C29/38 ,  G11C29/50 ,  G11C11/419 ,  G11C11/418 ,  G11C11/412

CPC classification number: G11C29/38 ,  G11C29/50004 ,  G11C11/419 ,  G11C11/418 ,  G11C11/412 ,  G11C2029/5004

Abstract: Systems of screening memory cells of a memory include modulating bitline and/or wordline voltage. In a read operation, the wordline may be overdriven or underdriven with respect to a nominal operating voltage on the wordline. In a write operation, one or both of the bitline and wordline may be overdriven or underdriven with respect to corresponding a nominal operating voltage. Such a system has margin control circuity, which may be in the form of bitline and wordline margin controls, to modulate bitline and wordline voltages, respectively, in the memory cells of the memory array.

公开(公告)号：US20200294614A1

公开(公告)日：2020-09-17

申请号：US16817096

申请日：2020-03-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Francisco Adolfo CANO ,  Devanathan VARADARAJAN ,  Anthony Martin HILL

IPC: G11C29/38 ,  G11C29/50 ,  G11C11/412 ,  G11C11/419 ,  G11C11/418

Abstract: Systems and methods of screening memory cells by modulating bitline and/or wordline voltage. In a read operation, the wordline may be overdriven or underdriven as compared to a nominal operating voltage on the wordline. In a write operation, the one or both of the bitline and wordline may be overdriven or underdriven as compared to a nominal operating voltage of each. A built-in self test (BIST) system for screening a memory array has bitline and wordline margin controls to modulate bitline and wordline voltage, respectively, in the memory array.