公开(公告)号：US20210091013A1

公开(公告)日：2021-03-25

申请号：US17030310

申请日：2020-09-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jonas Höhenberger ,  Gernot Biese

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/76

Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

公开(公告)号：US11587889B2

公开(公告)日：2023-02-21

申请号：US17030310

申请日：2020-09-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jonas Höhenberger ,  Gernot Biese

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/76

Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

公开(公告)号：US20230170314A1

公开(公告)日：2023-06-01

申请号：US18096704

申请日：2023-01-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jonas Höhenberger ,  Gernot Biese

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/76

CPC classification number: H01L23/564 ,  H01L23/544 ,  H01L21/76 ,  H01L2223/5446 ,  H01L2223/54406 ,  H01L2223/54426

Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.