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公开(公告)号:US20210091013A1
公开(公告)日:2021-03-25
申请号:US17030310
申请日:2020-09-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonas Höhenberger , Gernot Biese
IPC: H01L23/00 , H01L23/544 , H01L21/76
Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.
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公开(公告)号:US11587889B2
公开(公告)日:2023-02-21
申请号:US17030310
申请日:2020-09-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonas Höhenberger , Gernot Biese
IPC: H01L23/00 , H01L23/544 , H01L21/76
Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.
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公开(公告)号:US20250120157A1
公开(公告)日:2025-04-10
申请号:US18610150
申请日:2024-03-19
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonas Höhenberger , Ujwal Radhakrishna , Michael Lueders , Meng-Chia Lee , Chang Soo Suh , Zhikai Tang , Jungwoo Joh , Timothy Bryan Merkin , Stefan Herzer , Bernhard Ziegltrum , Helmut Rinck , Michael Hans Enzelberger-Heim , Ercuement Hasanoglu
IPC: H01L29/40 , H01L21/027 , H01L21/311 , H01L29/20 , H01L29/66 , H01L29/778
Abstract: The present disclosure generally relates to a semiconductor device having a slanted field plate. In an example, a semiconductor device includes a semiconductor substrate, a gate, a drain contact, a source contact, and a field plate. The gate is on a surface of the semiconductor substrate. The drain contact and a source contact are on the semiconductor substrate. The field plate is over the surface of the semiconductor substrate and extends from one side of the gate towards the drain contact. The field plate includes multiple field plate portions. Each of the multiple field plate portions has a uniform respective slope with respect to the surface, and the multiple field plate portions have different slopes.
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公开(公告)号:US20250105135A1
公开(公告)日:2025-03-27
申请号:US18472837
申请日:2023-09-22
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonas Höhenberger , Michael Hans Enzelberger-Heim
IPC: H01L23/522 , H01L27/06
Abstract: The present disclosure generally relates to a corrugated capacitor in an integrated circuit (IC). In an example, an IC includes a first corrugated conductive layer, a second corrugated conductive layer, and a corrugated dielectric layer. The first corrugated conductive layer and the second corrugated conductive layer are over a semiconductor substrate. The corrugated dielectric layer is between the first corrugated conductive layer and the second corrugated conductive layer. Various examples may achieve a larger surface areas for respective plates of a capacitor for a given lateral footprint of the capacitor.
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公开(公告)号:US11869725B2
公开(公告)日:2024-01-09
申请号:US17537626
申请日:2021-11-30
Applicant: Texas Instruments Incorporated
Inventor: Michael Hans Enzelberger-Heim , Jonas Höhenberger
Abstract: A stacked capacitor includes a capacitor stack. The capacitor stack includes a base plate having a first surface and a second opposing surface, a first dielectric layer on or over the base plate, and a first conductive plate on or over the first dielectric layer. A second dielectric layer is on or over the first conductive plate. A second conductive plate on or over the second dielectric layer. The capacitor stack has at least one sloped side with at least one slope with respect to the second surface of the base plate.
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公开(公告)号:US20230170314A1
公开(公告)日:2023-06-01
申请号:US18096704
申请日:2023-01-13
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jonas Höhenberger , Gernot Biese
IPC: H01L23/00 , H01L23/544 , H01L21/76
CPC classification number: H01L23/564 , H01L23/544 , H01L21/76 , H01L2223/5446 , H01L2223/54406 , H01L2223/54426
Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.
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