CORRUGATED CAPACITOR
    4.
    发明申请

    公开(公告)号:US20250105135A1

    公开(公告)日:2025-03-27

    申请号:US18472837

    申请日:2023-09-22

    Abstract: The present disclosure generally relates to a corrugated capacitor in an integrated circuit (IC). In an example, an IC includes a first corrugated conductive layer, a second corrugated conductive layer, and a corrugated dielectric layer. The first corrugated conductive layer and the second corrugated conductive layer are over a semiconductor substrate. The corrugated dielectric layer is between the first corrugated conductive layer and the second corrugated conductive layer. Various examples may achieve a larger surface areas for respective plates of a capacitor for a given lateral footprint of the capacitor.

    Multi-stacked capacitor
    5.
    发明授权

    公开(公告)号:US11869725B2

    公开(公告)日:2024-01-09

    申请号:US17537626

    申请日:2021-11-30

    CPC classification number: H01G4/40 H01G4/008 H01G4/30

    Abstract: A stacked capacitor includes a capacitor stack. The capacitor stack includes a base plate having a first surface and a second opposing surface, a first dielectric layer on or over the base plate, and a first conductive plate on or over the first dielectric layer. A second dielectric layer is on or over the first conductive plate. A second conductive plate on or over the second dielectric layer. The capacitor stack has at least one sloped side with at least one slope with respect to the second surface of the base plate.

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