公开(公告)号：US10937574B2

公开(公告)日：2021-03-02

申请号：US16576809

申请日：2019-09-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gregory Keith Cestra ,  Andrew Strachan

IPC: H01C7/06 ,  H01C17/24 ,  H01C7/00 ,  G01K7/01 ,  H01L49/02 ,  H01C17/242 ,  H01C13/02 ,  H01L27/08

Abstract: Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within the semiconductor substrate and including a top contact. A conductive layer located over the semiconductor substrate electrically connects to a subset of the top contacts.

公开(公告)号：US20190148041A1

公开(公告)日：2019-05-16

申请号：US15811069

申请日：2017-11-13

Applicant: Texas Instruments Incorporated

Inventor： Gregory Keith Cestra ,  Andrew Strachan

IPC: H01C7/00 ,  H01C7/06

CPC classification number: H01C7/008 ,  G01K7/01 ,  H01C7/006 ,  H01C7/06 ,  H01C13/02 ,  H01C17/24 ,  H01C17/242 ,  H01L28/20

Abstract: Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.

公开(公告)号：US20200013528A1

公开(公告)日：2020-01-09

申请号：US16576809

申请日：2019-09-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gregory Keith Cestra ,  Andrew Strachan

IPC: H01C7/00 ,  H01C7/06

Abstract: Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a plurality of resistor unit cells arranged in an array, each resistor unit cell formed within the semiconductor substrate and including a top contact. A conductive layer located over the semiconductor substrate electrically connects to a subset of the top contacts.

公开(公告)号：US10431357B2

公开(公告)日：2019-10-01

申请号：US15811069

申请日：2017-11-13

Applicant: Texas Instruments Incorporated

Inventor： Gregory Keith Cestra ,  Andrew Strachan

IPC: H01C7/00 ,  H01C7/06

Abstract: Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.