公开(公告)号：US20150357461A1

公开(公告)日：2015-12-10

申请号：US14299051

申请日：2014-06-09

Applicant: Texas Instruments Incorporated

Inventor： Hideaki KAWAHARA ,  Christopher Boguslaw KOCON ,  Simon John MOLLOY ,  Jayhoon CHUNG ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7813

Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.

Abstract translation: 半导体器件包括具有在垂直漏极漂移区域中以恒定间隔分开的多个并联RESURF漏极沟槽的垂直MOS晶体管。 垂直MOS晶体管有倒角; 每个倒角都延伸穿过至少五个漏极沟槽。 RESURF端接沟槽围绕漏极沟槽，从漏极沟槽的侧面和端部分离出作为漏极沟槽间隔的函数的距离。 在倒角处，终端沟槽包括围绕漏极沟槽的一端延伸的外部角部，该沟槽延伸穿过相邻的漏极沟槽，并且包括延伸穿过从相邻漏极沟槽凹陷的漏极沟槽的端部的内部角部。 端接沟槽在倒角处与漏极沟槽分开，距离也是漏极沟槽间隔的函数。

公开(公告)号：US20130193502A1

公开(公告)日：2013-08-01

申请号：US13744097

申请日：2013-01-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw KOCON ,  Hideaki KAWAHARA ,  Simon John MOLLOY ,  Satoshi SUZUKI ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L21/31105 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66181 ,  H01L29/66712 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7831

Abstract: A semiconductor device includes a medium voltage MOSFET having a vertical drain drift region between RESURF trenches containing field plates which are electrically coupled to a source electrode of the MOSFET. A split gate with a central opening is disposed above the drain drift region between the RESURF trenches. A two-level LDD region is disposed below the central opening in the split gate. A contact metal stack makes contact with a source region at lateral sides of the triple contact structure, and with a body contact region and the field plates in the RESURF trenches at a bottom surface of the triple contact structure. A perimeter RESURF trench surrounds the MOSFET. A field plate in the perimeter RESURF trench is electrically coupled to the source electrode of the MOSFET. An integrated snubber may be formed in trenches formed concurrently with the RESURF trenches.

Abstract translation: 半导体器件包括中等电压MOSFET，其在包含场耦合到MOSFET的源电极的场板的RESURF沟槽之间具有垂直漏极漂移区。 具有中心开口的分流栅设置在RESURF沟槽之间的漏极漂移区的上方。 两级LDD区域设置在分裂门的中心开口下方。 接触金属叠层与三接触结构的侧面处的源极区域接触，并且在三触点结构的底表面处与主体接触区域和RESURF沟槽中的场板接触。 周边RESURF沟槽围绕着MOSFET。 外围RESURF沟槽中的场板电耦合到MOSFET的源电极。 集成缓冲器可以形成在与RESURF沟槽同时形成的沟槽中。

公开(公告)号：US20160359039A1

公开(公告)日：2016-12-08

申请号：US15238812

申请日：2016-08-17

Applicant: Texas Instruments Incorporated

Inventor： Hideaki KAWAHARA ,  Christopher Boguslaw KOCON ,  Simon John MOLLOY ,  Jayhoon CHUNG ,  John Manning Savidge NEILSON

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7813

Abstract: A semiconductor device includes a vertical MOS transistor with a plurality of parallel RESURF drain trenches separated by a constant spacing in a vertical drain drift region. The vertical MOS transistor has chamfered corners; each chamfered corner extends across at least five of the drain trenches. A RESURF termination trench surrounds the drain trenches, separated from sides and ends of the drain trenches by distances which are functions of the drain trench spacing. At the chamfered corners, the termination trench includes external corners which extend around an end of a drain trench which extends past an adjacent drain trench, and includes internal corners which extend past an end of a drain trench which is recessed from an adjacent drain trench. The termination trench is separated from the drain trenches at the chamfered corners by distances which are also functions of the drain trench spacing.