公开(公告)号：US20230238920A1

公开(公告)日：2023-07-27

申请号：US17582338

申请日：2022-01-24

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Mahadevan Shankara Venkiteswaran ,  Arun Singh ,  Jofin Vadakkeparasseril Joseph

IPC分类号： H03F1/30 ,  H03F3/45 ,  H03F1/52 ,  H03F3/00

CPC分类号： H03F1/303 ,  H03F3/45632 ,  H03F1/52 ,  H03F3/005

摘要： An output stage of an operational amplifier includes a low voltage (LV) metal oxide semiconductor (MOS) device and a dynamic current limit circuit. An output current of the operational amplifier flows through the LV MOS device. The dynamic current limit circuit is configured to sense a drain voltage of the LV MOS device and increase a clamping voltage for the LV MOS device when the drain voltage of the LV MOS device is less than a threshold voltage.

公开(公告)号：US11929717B2

公开(公告)日：2024-03-12

申请号：US17582338

申请日：2022-01-24

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Mahadevan Shankara Venkiteswaran ,  Arun Singh ,  Jofin Vadakkeparasseril Joseph

IPC分类号： H03F1/52 ,  H03F1/30 ,  H03F3/00 ,  H03F3/45

CPC分类号： H03F1/303 ,  H03F1/52 ,  H03F3/005 ,  H03F3/45632

摘要： An output stage of an operational amplifier includes a low voltage (LV) metal oxide semiconductor (MOS) device and a dynamic current limit circuit. An output current of the operational amplifier flows through the LV MOS device. The dynamic current limit circuit is configured to sense a drain voltage of the LV MOS device and increase a clamping voltage for the LV MOS device when the drain voltage of the LV MOS device is less than a threshold voltage.