公开(公告)号：US20250140560A1

公开(公告)日：2025-05-01

申请号：US18496697

申请日：2023-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jackson Bauer ,  Sheldon Douglas Haynie ,  John Arch ,  Asad Haider

IPC: H01L21/266 ,  H01L21/265 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: An integrated circuit (IC) device including one or more corrugated channel structures formed in a top portion of a semiconductor substrate, where a corrugated channel structure includes a first sidewall, a second sidewall and an upper portion. In an example, the corrugated channel structure is provided with a substantially uniform distribution profile of a dopant across a horizontal plane from the first sidewall to the second sidewall.