公开(公告)号：US20240038579A1

公开(公告)日：2024-02-01

申请号：US17877964

申请日：2022-07-31

Applicant: Texas Instruments Incorporated

Inventor： Asad Haider ,  Hao Yang ,  Guruvayurappan Mathur ,  Alexei Sadovnikov ,  Abbas Ali ,  Umamaheswari Aghoram

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L29/0623

Abstract: An electronic device includes a semiconductor substrate and a semiconductor surface layer having a first conductivity type, as well as a buried layer, a deep trench structure and a shallow trench isolation structure, the semiconductor surface layer over the semiconductor substrate and having a top surface, the buried layer having an opposite second conductivity type between the semiconductor surface layer and the semiconductor substrate, the deep trench structure including a trench that extends through the semiconductor surface layer and into the buried layer, a dielectric liner on a sidewall of the trench from the semiconductor surface layer to the buried layer, and polysilicon that extends on the dielectric liner and fills the trench to the side of the semiconductor surface layer, the shallow trench isolation structure extends into the semiconductor surface layer, and the shallow trench isolation structure in contact with the deep trench structure.

公开(公告)号：US20250140560A1

公开(公告)日：2025-05-01

申请号：US18496697

申请日：2023-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jackson Bauer ,  Sheldon Douglas Haynie ,  John Arch ,  Asad Haider

IPC: H01L21/266 ,  H01L21/265 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: An integrated circuit (IC) device including one or more corrugated channel structures formed in a top portion of a semiconductor substrate, where a corrugated channel structure includes a first sidewall, a second sidewall and an upper portion. In an example, the corrugated channel structure is provided with a substantially uniform distribution profile of a dopant across a horizontal plane from the first sidewall to the second sidewall.

公开(公告)号：US20240038580A1

公开(公告)日：2024-02-01

申请号：US17877976

申请日：2022-07-31

Applicant: Texas Instruments Incorporated

Inventor： Hao Yang ,  Asad Haider ,  Guruvayurappan Mathur ,  Abbas Ali ,  Alexei Sadovnikov ,  Umamaheswari Aghoram

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L29/0623

Abstract: An electronic device includes a semiconductor substrate and a semiconductor surface layer having a first conductivity type, the semiconductor surface layer over the semiconductor substrate and having a top surface, a buried layer having an opposite second conductivity type between the semiconductor surface layer and the semiconductor substrate, a dielectric isolation layer that extends over and into the semiconductor surface layer, a deep trench structure that extends through the dielectric isolation layer into the semiconductor surface layer, and a silicide blocking layer on a top surface of the deep trench structure.