公开(公告)号：US20210074629A1

公开(公告)日：2021-03-11

申请号：US16561593

申请日：2019-09-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika FERNANDES ,  Ye SHAO ,  Guruvayurappan S. MATHUR ,  John K. ARCH ,  Paul STULIK

IPC: H01L23/522 ,  H01G15/00

Abstract: An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.

公开(公告)号：US20220093507A1

公开(公告)日：2022-03-24

申请号：US17540447

申请日：2021-12-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Poornika FERNANDES ,  Ye SHAO ,  Guruvayurappan S. MATHUR ,  John K. ARCH ,  Paul STULIK

IPC: H01L23/522 ,  H01G15/00

Abstract: An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.