公开(公告)号：US20150214222A1

公开(公告)日：2015-07-30

申请号：US14608391

申请日：2015-01-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jun WANG ,  Frank BAIOCCHI ,  Haian LIN

IPC: H01L27/088 ,  H01L29/78 ,  H02M3/155

CPC classification number: H01L27/088 ,  H01L21/26533 ,  H01L21/761 ,  H01L21/823493 ,  H01L27/1207 ,  H01L29/0649 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/7816 ,  H01L29/7835 ,  H02M3/1588 ,  Y02B70/1466

Abstract: An integrated semiconductor transistor chip for use in a buck converter includes a high side transistor formed on the chip and comprising a laterally diffused metal oxide semiconductor (LDMOS) transistor and a low side transistor formed on the chip and comprising a source down metal oxide semiconductor field effect transistor (MOSFET). The chip also includes a substrate of the chip for use as a source for the low side transistor and an n-doped well for isolation of the high side transistor from the source of the low side transistor.

Abstract translation: 用于降压转换器的集成半导体晶体管芯片包括形成在芯片上并包括横向扩散的金属氧化物半导体（LDMOS）晶体管的高侧晶体管和形成在芯片上的低侧晶体管，并且包括源极下行金属氧化物半导体场 效应晶体管（MOSFET）。 该芯片还包括用作低侧晶体管的源极的芯片的衬底和用于将高侧晶体管与低侧晶体管的源极隔离的n掺杂阱。