公开(公告)号：US10901034B2

公开(公告)日：2021-01-26

申请号：US16795842

申请日：2020-02-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Lee D. Whetsei ,  Baher S. Haroun

IPC: G01R31/3177 ,  G01R31/26 ,  G01R31/3185 ,  G01R31/317

Abstract: This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.