公开(公告)号：US20230197143A1

公开(公告)日：2023-06-22

申请号：US17558176

申请日：2021-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ruchi Shankar ,  Shobhit Singhal ,  Sverre Brubæk ,  Praveen Kumar Narayanan

IPC: G11C11/412 ,  G11C11/419

CPC classification number: G11C11/412 ,  G11C11/419 ,  G11C11/418

Abstract: A static random-access memory (SRAM) includes a SRAM cell module, comprising a plurality of SRAM cell partitions, and an initialization register, containing data configured to control initialization of at least some of the plurality of partitions during an initialization phase. The SRAM also includes a control module coupled with the SRAM cell module and the initialization register, configured to read the initialization register during the initialization phase, and to selectively initialize a portion of the plurality of SRAM cell partitions, based at least in part on the data contained within the initialization register.

公开(公告)号：US20240071561A1

公开(公告)日：2024-02-29

申请号：US17823599

申请日：2022-08-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Robin O. Hoel ,  Praveen Kumar Narayanan ,  Ruchi Shankar

IPC: G11C29/00 ,  G11C11/418

CPC classification number: G11C29/883 ,  G11C11/418

Abstract: An electronic system includes a repair MMR coupled with a first SRAM module within a plurality of SRAM modules coupled with each other in a daisy-chain configuration on a repair interface, and coupled with a last SRAM module within the plurality of SRAM modules via the repair interface. The electronic system also includes storage memory configured to store repair data for the plurality of SRAM modules and repair instructions, and processing circuitry. The processing circuitry is configured to, during boot up of the electronic system, read repair data for one or more of the plurality of SRAM modules from the storage memory, create serialized repair data for one or more the plurality of SRAM modules based on the repair instructions and the repair data, and to sequentially transmit the serialized repair data to the MMR.

公开(公告)号：US12046275B2

公开(公告)日：2024-07-23

申请号：US17558176

申请日：2021-12-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ruchi Shankar ,  Shobhit Singhal ,  Sverre Brubæk ,  Praveen Kumar Narayanan

IPC: G06F9/445 ,  G11C11/412 ,  G11C11/419 ,  G11C11/418

CPC classification number: G11C11/412 ,  G11C11/419 ,  G11C11/418

Abstract: A static random-access memory (SRAM) includes a SRAM cell module, comprising a plurality of SRAM cell partitions, and an initialization register, containing data configured to control initialization of at least some of the plurality of partitions during an initialization phase. The SRAM also includes a control module coupled with the SRAM cell module and the initialization register, configured to read the initialization register during the initialization phase, and to selectively initialize a portion of the plurality of SRAM cell partitions, based at least in part on the data contained within the initialization register.