公开(公告)号：US20190304786A1

公开(公告)日：2019-10-03

申请号：US15944550

申请日：2018-04-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Abbas ALI ,  Binghua HU ,  Stephanie L. HILBUN ,  Scott William JESSEN ,  Ronald CHIN ,  Jarvis Benjamin JACOBS

IPC: H01L21/266 ,  H01L29/66

Abstract: A method to fabricate a transistor comprises: forming a first dielectric layer on a semiconductor substrate; depositing a barrier layer on the first dielectric layer; depositing an anti-reflective coating on the barrier layer; depositing and exposing a pattern in a photoresist layer to radiation followed by etching to provide an opening; etching a portion of the anti-reflective coating below the opening; etching a portion of the barrier layer below the opening to expose a portion of the first dielectric layer; providing an ambient oxidizing agent to grow an oxide region followed by removing the barrier layer; implanting dopants into the semiconductor substrate after removing the barrier layer; removing the first dielectric layer after implanting dopants into the semiconductor substrate; and forming a second dielectric layer after removing the first dielectric layer, wherein the oxide region is grown to be thicker than the second dielectric layer.