公开(公告)号：US20220416014A1

公开(公告)日：2022-12-29

申请号：US17512484

申请日：2021-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Furen Lin ,  Yunlong Liu ,  Zhi Peng Feng ,  Rui Liu ,  Rui Song ,  Manoj K. Jain

IPC: H01L49/02

Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.

公开(公告)号：US20240395854A1

公开(公告)日：2024-11-28

申请号：US18795747

申请日：2024-08-06

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Furen Lin ,  Yunlong Liu ,  Zhi Peng Feng ,  Rui Liu ,  Rui Song ,  Manoj K Jain

IPC: H01G4/30

Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.

公开(公告)号：US12080755B2

公开(公告)日：2024-09-03

申请号：US17512484

申请日：2021-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Furen Lin ,  Yunlong Liu ,  Zhi Peng Feng ,  Rui Liu ,  Rui Song ,  Manoj K Jain

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/495 ,  H01L27/08 ,  H01L29/66 ,  H01L49/02

CPC classification number: H01L28/91 ,  H01L28/92

Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.