公开(公告)号：US20220005814A1

公开(公告)日：2022-01-06

申请号：US17479542

申请日：2021-09-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Carl Sebastian MORANDI ,  Susan TROLIER-McKINSTRY ,  Kezhakkedath Ramunni UDAYAKUMAR ,  John Anthony RODRIGUEZ ,  Bhaskar SRINIVASAN

IPC: H01L27/11507 ,  H01L49/02

Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.

公开(公告)号：US20180226418A1

公开(公告)日：2018-08-09

申请号：US15893323

申请日：2018-02-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Carl Sebastian MORANDI ,  Susan TROLIER-McKINSTRY ,  Kezhakkedath Ramunni UDAYAKUMAR ,  John Anthony RODRIGUEZ ,  Bhaskar SRINIVASAN

IPC: H01L27/11507 ,  H01L49/02

CPC classification number: H01L27/11507 ,  H01L28/55 ,  H01L28/56 ,  H01L28/57

Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.