SHORT CIRCUIT PROTECTION
    1.
    发明公开

    公开(公告)号:US20240006869A1

    公开(公告)日:2024-01-04

    申请号:US18469109

    申请日:2023-09-18

    CPC classification number: H02H3/08 H02H1/06

    Abstract: In some examples, this description provides for an apparatus. The apparatus includes a power switch having a power switch source configured to receive an input voltage, a power switch drain, and a power switch gate. The apparatus also includes a current sense component coupled to the power switch. The apparatus also includes a current limiting circuit coupled to the power switch gate, the power switch drain, and the current sense component. The apparatus also includes an over-current protection (OCP) circuit coupled to the power switch source, the power switch drain, and the power switch gate. The apparatus also includes an output voltage (VOUT) clamp coupled to the power switch drain and the power switch gate.

    SHORT CIRCUIT PROTECTION
    2.
    发明申请

    公开(公告)号:US20220360068A1

    公开(公告)日:2022-11-10

    申请号:US17514774

    申请日:2021-10-29

    Abstract: In some examples, this description provides for an apparatus. The apparatus includes a power switch having a power switch source configured to receive an input voltage, a power switch drain, and a power switch gate. The apparatus also includes a current sense component coupled to the power switch. The apparatus also includes a current limiting circuit coupled to the power switch gate, the power switch drain, and the current sense component. The apparatus also includes an over-current protection (OCP) circuit coupled to the power switch source, the power switch drain, and the power switch gate. The apparatus also includes an output voltage (VOUT) clamp coupled to the power switch drain and the power switch gate.

    OUTPUT CURRENT DETECTION IN HIGH-SIDE SWITCH

    公开(公告)号:US20230236247A1

    公开(公告)日:2023-07-27

    申请号:US17974968

    申请日:2022-10-27

    Abstract: In an example, a system includes a first power stage including a first power field effect transistor (FET) and a first sense transistor coupled to the first power FET. The system also includes a second power stage including a second power FET and a second sense transistor coupled to the second power FET, where the second power stage is smaller than the first power stage. The system includes a first switch coupled to a gate and a drain of the first power FET and a second switch coupled to the first power stage and the second power stage. The system also includes a sense amplifier coupled to the second switch, where the first power stage, the second power stage, and the sense amplifier are coupled to a load terminal.

    FAULT VOLTAGE SCALING ON LOAD SWITCH CURRENT SENSE

    公开(公告)号:US20220385282A1

    公开(公告)日:2022-12-01

    申请号:US17538547

    申请日:2021-11-30

    Abstract: A load switch includes a switch input, a switch output, a first field-effect transistor (FET), and a second FET. The switch input is adapted to be coupled to a controller output of a controller. The switch output is adapted to be coupled to a controller input of the controller. The first FET has a gate and a source. The gate of the first FET is coupled to the switch input. The second FET has a gate and a source. The gate of the second FET is coupled to the source of the first FET. The source of the second FET is coupled to the switch output.

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