公开(公告)号：US12119289B2

公开(公告)日：2024-10-15

申请号：US18328896

申请日：2023-06-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yee Gin Tea ,  Chong Han Lim

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49548 ,  H01L21/4825 ,  H01L21/4828 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/06 ,  H01L24/29 ,  H01L24/49 ,  H01L2924/181

Abstract: In some examples, a semiconductor package comprises a die pad, a semiconductor die on the die pad, and a mold compound covering the die pad and the semiconductor die. The semiconductor package includes a conductive component including a roughened surface, the roughened surface having a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2. The mold compound is coupled to the roughened surface. The semiconductor package includes a bond wire coupling the semiconductor die to the roughened surface. The bond wire is directly coupled to the roughened surface without a precious metal positioned therebetween.

公开(公告)号：US11715678B2

公开(公告)日：2023-08-01

申请号：US17157557

申请日：2021-01-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yee Gin Tea ,  Chong Han Lim

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49548 ,  H01L21/4825 ,  H01L21/4828 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49582 ,  H01L24/06 ,  H01L2924/181

Abstract: In some examples, a semiconductor package comprises a die pad, a semiconductor die on the die pad, and a mold compound covering the die pad and the semiconductor die. The semiconductor package includes a conductive component including a roughened surface, the roughened surface having a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2. The mold compound is coupled to the roughened surface. The semiconductor package includes a bond wire coupling the semiconductor die to the roughened surface. The bond wire is directly coupled to the roughened surface without a precious metal positioned therebetween.