公开(公告)号：US20160294335A1

公开(公告)日：2016-10-06

申请号：US15035561

申请日：2014-11-18

Applicant: THALES

Inventor： Jean-Philippe PLAZE ,  Vincent PETIT ,  Benoît MALLET-GUY

IPC: H03F1/52 ,  H03G11/00 ,  H03F3/19

CPC classification number: H03F1/52 ,  H03F3/19 ,  H03F2200/211 ,  H03F2200/294 ,  H03F2200/444 ,  H03F2200/451 ,  H03G7/00 ,  H03G11/00 ,  H03G11/002 ,  H03G11/02 ,  H03G11/06

Abstract: This radiofrequency power limiter includes at least one transistor, a drain of the transistor being directly connected to a mesh connecting an input to an output of the limiter, a source of the transistor being connected to a common reference potential, and a gate of the transistor being connected to a common control potential. The transistor is not biased between its drain and its source during operation of the limiter.

Abstract translation: 该射频功率限制器包括至少一个晶体管，晶体管的漏极直接连接到将输入连接到限幅器的输出的网，晶体管的源极连接到公共参考电位，并且晶体管的栅极 连接到共同的控制电位。 晶体管在限流器运行期间不会在其漏极和源极之间偏置。