专利检索 ap:("THE REGENTS OF THE UNIVERSITY OF CALIFORNIA") AND inv:"Xuefeng Gu" 第 1 页

1.

发明授权
Fine-grained analog memory device based on charge-trapping in high-K gate dielectrics of transistors 有权

公开(公告)号：US10585643B2

公开(公告)日：2020-03-10

申请号：US15595680

申请日：2017-05-15

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Xuefeng Gu , Subramanian S. Iyer

IPC分类号： G06N3/063 , G11C11/54 , G06F7/02 , H01L29/792 , G11C27/00 , G11C16/04

摘要： A fine-grained analog memory device includes: 1) a charge-trapping transistor including a gate and a high-k gate dielectric; and 2) a pulse generator connected to the gate and configured to apply a positive or negative pulse to the gate to change an amount of charges trapped in the high-k gate dielectric.

2.

发明申请
FINE-GRAINED ANALOG MEMORY DEVICE BASED ON CHARGE-TRAPPING IN HIGH-K GATE DIELECTRICS OF TRANSISTORS 审中-公开

公开(公告)号：US20170329575A1

公开(公告)日：2017-11-16

申请号：US15595680

申请日：2017-05-15

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Xuefeng Gu , Subramanian S. Iyer

IPC分类号： G06F7/02 , G11C11/21 , G11C5/02 , G11C7/22 , H01L29/792 , G11C11/34

摘要： A fine-grained analog memory device includes: 1) a charge-trapping transistor including a gate and a high-k gate dielectric; and 2) a pulse generator connected to the gate and configured to apply a positive or negative pulse to the gate to change an amount of charges trapped in the high-k gate dielectric.