公开(公告)号：US20170133431A1

公开(公告)日：2017-05-11

申请号：US15349059

申请日：2016-11-11

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Joanna MIRECKI-MILLUNCHICK ,  Jamie PHILLIPS ,  Alan S. TERAN ,  Matthew T. DEJARLD

IPC: H01L27/15 ,  H01L33/04 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L27/092 ,  H01L33/08

CPC classification number: H01L33/0066 ,  H01L27/092 ,  H01L33/08 ,  H01L33/18 ,  H01L33/40

Abstract: With an increasing demand for miniature low power sensors, there is a need to integrate optoelectronic devices with CMOS technology. Deposition of GaAs nanowires on polycrystalline conductive films allows for direct integration of optoelectronic devices on dissimilar materials. Nanowire growth is demonstrated on oxide and metallic films. Introducing dopant elements modifies the surface energy improving nanowire morphology and lowing for core-shell growth. Electrical measurements confirm that the metal-semiconductor junction is Ohmic and thus the feasibility of integrating nanowire-based devices directly on CMOS devices.