公开(公告)号：US20210244280A1

公开(公告)日：2021-08-12

申请号：US17173976

申请日：2021-02-11

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： David T. BLAAUW ,  Jamie PHILLIPS ,  Cynthia Anne CHESTEK ,  Taekwang JANG ,  Hun-Seok KIM ,  Dennis SYLVESTER ,  Jongyup LIM ,  Eunseong MOON ,  Michael BARROW ,  Samuel NASON ,  Julianna RICHIE ,  Paras PATEL

IPC: A61B5/00 ,  H04B10/80 ,  H04B10/114 ,  A61B5/37 ,  A61B5/384

Abstract: A mote includes an optical receiver that wirelessly receives a power and data signal in form of NIR light energy within a patient and converts the NIR light energy to an electrical signal having a supply voltage. A control module supplies the supply voltage to power devices of the mote. A clock generation circuit locks onto a target clock frequency based on the power and data signal and generates clock signals. A data recovery circuit sets parameters of one of the devices based on the power and data signal and a first clock signal. An amplifier amplifies a neuron signal detected via an electrode inserted in tissue of the patient. A chip identifier module, based on a second clock signal, generates a recorded data signal based on a mote chip identifier and the neuron signal. A driver transmits the recorded data signal via a LED or a RF transmitter.

公开(公告)号：US20170133431A1

公开(公告)日：2017-05-11

申请号：US15349059

申请日：2016-11-11

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Joanna MIRECKI-MILLUNCHICK ,  Jamie PHILLIPS ,  Alan S. TERAN ,  Matthew T. DEJARLD

IPC: H01L27/15 ,  H01L33/04 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L27/092 ,  H01L33/08

CPC classification number: H01L33/0066 ,  H01L27/092 ,  H01L33/08 ,  H01L33/18 ,  H01L33/40

Abstract: With an increasing demand for miniature low power sensors, there is a need to integrate optoelectronic devices with CMOS technology. Deposition of GaAs nanowires on polycrystalline conductive films allows for direct integration of optoelectronic devices on dissimilar materials. Nanowire growth is demonstrated on oxide and metallic films. Introducing dopant elements modifies the surface energy improving nanowire morphology and lowing for core-shell growth. Electrical measurements confirm that the metal-semiconductor junction is Ohmic and thus the feasibility of integrating nanowire-based devices directly on CMOS devices.