Mosaic of m.o.s. type semiconductor elements
    1.
    发明授权
    Mosaic of m.o.s. type semiconductor elements 失效
    莫斯科 类型半导体元件

    公开(公告)号:US3775646A

    公开(公告)日:1973-11-27

    申请号:US3775646D

    申请日:1973-03-05

    Applicant: THOMSON CSF

    Inventor: LECLERC P

    CPC classification number: H01L27/14643

    Abstract: A metal matrix of photo-M.O.S. devices, transparent to radiation is provided. A gate is associated with each of the collectors of the matrix. Said gate overlaps partly onto the associated collector. The other part of the collector is covered by a layer of insulating material and a thick layer, connected to the gate of the neighbouring element of the same line in a plane located between the two collectors. The collectors of one and the same column are electrically connected. The gates of one and the same line are electrically connected.

    Abstract translation: 一种金属基质的照片。 提供对辐射透明的装置。 门与每个矩阵的收集器相关联。 所述门部分地重叠在相关联的收集器上。 收集器的另一部分由位于两个收集器之间的平面中的相同线的相邻元件的栅极连接的绝缘材料层和厚层覆盖。 同一列的收集器电连接。 同一条线的栅极电连接。

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