公开(公告)号：US20240290908A1

公开(公告)日：2024-08-29

申请号：US18625867

申请日：2024-04-03

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： ChingYuan TSAI ,  Chun-Yi WU ,  Fulong LI ,  Duxiang WANG ,  Chaoyu WU ,  Wenhao GAO ,  Xiaofeng LIU ,  Weihuan LI ,  Liming SHU ,  Chao LIU

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/0062 ,  H01L33/0093 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

公开(公告)号：US20230187574A1

公开(公告)日：2023-06-15

申请号：US18157237

申请日：2023-01-20

Applicant: TIANJIN SANAN OPTOELECTRONICS CO., LTD.

Inventor： ChingYuan TSAI ,  Chun-Yi WU ,  Fulong LI ,  Duxiang WANG ,  Chaoyu WU ,  Wenhao GAO ,  Xiaofeng LIU ,  Weihuan LI ,  Liming SHU ,  Chao LIU

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/0062 ,  H01L33/0093 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

Abstract: A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.