公开(公告)号：US20220033976A1

公开(公告)日：2022-02-03

申请号：US17386135

申请日：2021-07-27

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Fuyuki SATO ,  Takayuki NEGISHI

IPC: C23F1/44 ,  H01L21/306 ,  C23F1/38

Abstract: The present invention provides a method for inhibiting a RuO4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO4 gas, including at least one of a reducing agent and a basic compound.