公开(公告)号：US20220033976A1

公开(公告)日：2022-02-03

申请号：US17386135

申请日：2021-07-27

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Fuyuki SATO ,  Takayuki NEGISHI

IPC: C23F1/44 ,  H01L21/306 ,  C23F1/38

Abstract: The present invention provides a method for inhibiting a RuO4 gas generated from a ruthenium-containing liquid in the production process of a semiconductor element. The present invention provides a method for inhibiting a Ru4 gas generated from a ruthenium-containing liquid by adding an inhibitor for inhibiting the generation of a RuO4 gas, to a ruthenium-containing liquid. The present invention also provides an inhibitor for inhibiting the generation of a RuO4 gas, including at least one of a reducing agent and a basic compound.

公开(公告)号：US20210340095A1

公开(公告)日：2021-11-04

申请号：US17266283

申请日：2020-09-23

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C07C211/63 ,  H01L21/321 ,  H01L21/3213

Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

公开(公告)号：US20240087911A1

公开(公告)日：2024-03-14

申请号：US18267880

申请日：2021-12-13

Applicant: TOKUYAMA CORPORATION

Inventor： Kohei SAITO ,  Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: H01L21/3213 ,  H01L21/306

CPC classification number: H01L21/32134 ,  H01L21/30604

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

公开(公告)号：US20240055272A1

公开(公告)日：2024-02-15

申请号：US18269195

申请日：2021-12-20

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Kohei SAITO ,  Hiroto YARIMIZU ,  Takayuki NEGISHI

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L22/12

Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.1 or greater and 10 or less, the etching amount ratio being a ratio of an etching amount in one crystal plane of the transition metal to an etching amount in another crystal plane of the transition metal; a processing method for a semiconductor containing a transition metal, the method including etching the transition metal, and measuring an etching amount ratio of the transition metal; and a processing liquid for semiconductors, the processing liquid containing an amphoteric surfactant or an amine, the amphoteric surfactant being betaine, imidazoline, glycine or an amine oxide.

公开(公告)号：US20230257887A1

公开(公告)日：2023-08-17

申请号：US18139559

申请日：2023-04-26

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C23F1/40 ,  H01L21/306

CPC classification number: C23F1/40 ,  H01L21/30604

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US20220316996A1

公开(公告)日：2022-10-06

申请号：US17619310

申请日：2020-06-17

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI ,  Shigenori MAEDA

IPC: G01N1/22 ,  B01D53/14 ,  G01N33/00

Abstract: A ruthenium oxide gas absorbent liquid includes an organic alkali solution containing a ligand and/or an onium salt composed of an onium ion and an anion, at least part of which is a hydroxide ion, wherein the hydroxide ion has a concentration ranging from more than 1×10−7 mol/L to 6 mol/L or less.

公开(公告)号：US20220315522A1

公开(公告)日：2022-10-06

申请号：US17838536

申请日：2022-06-13

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: C07C209/68 ,  C11D3/395 ,  C11D11/00 ,  B08B3/08 ,  H01L21/02

Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

公开(公告)号：US20220073820A1

公开(公告)日：2022-03-10

申请号：US17419058

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C09K13/06 ,  H01L21/304

Abstract: Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided. (In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X− is, for example, a chloride ion.)

公开(公告)号：US20220010206A1

公开(公告)日：2022-01-13

申请号：US17294148

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Takayuki NEGISHI ,  Seiji TONO ,  Tomoaki SATO

IPC: C09K13/06 ,  H01L21/3213

Abstract: The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1): (wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20).

公开(公告)号：US20210155878A1

公开(公告)日：2021-05-27

申请号：US16953754

申请日：2020-11-20

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: C11D3/395 ,  C11D11/00 ,  C07C209/68 ,  H01L21/02 ,  B08B3/08

Abstract: Provided is a method of producing a quatenary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.