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公开(公告)号：US20240067878A1
公开(公告)日：2024-02-29
申请号：US18239303
申请日：2023-08-29
Applicant: TOKUYAMA CORPORATION
Inventor： Tatsuya HITOMI , Yoshiki SEIKE , Kohsuke NORO , Kohshiro OKIMURA
IPC: C09K13/04 , H01L21/306
CPC classification number: C09K13/04 , H01L21/30604
Abstract: A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.
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