公开(公告)号：US20220403242A1

公开(公告)日：2022-12-22

申请号：US17821490

申请日：2022-08-23

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2   (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

公开(公告)号：US20240124775A1

公开(公告)日：2024-04-18

申请号：US18268794

申请日：2021-12-22

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30608

Abstract: A silicon etching solution contains: a quaternary ammonium hydroxide represented by the following Formula (1): R11R12R13R14N+·OH− (1) (in the formula, R11, R12, R13, and R14 are each independently an aryl group, a benzyl group, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group, the aryl group, or the benzyl group may have a hydroxy group); a quaternary ammonium salt represented by the following Formula (2) and having 11 to 20 carbon atoms in total: R21R22R23R24N+·X− (2) (in the formula, one of R21, R22, R23, and R24 is an alkyl group having 16 or less carbon atoms, which may have a substituent, each of the remaining three is an alkyl group having 1 or 2 carbon atoms, the alkyl group having 16 or less carbon atoms and the alkyl group having 1 or 2 carbon atoms may have a hydroxy group, and X is at least one selected from the group consisting of BF4, a fluorine atom, a chlorine atom, and a bromine atom); a polyhydroxy compound having 2 to 12 carbon atoms and having two or more hydroxy groups in a molecule; and water.

公开(公告)号：US20240067878A1

公开(公告)日：2024-02-29

申请号：US18239303

申请日：2023-08-29

Applicant: TOKUYAMA CORPORATION

Inventor： Tatsuya HITOMI ,  Yoshiki SEIKE ,  Kohsuke NORO ,  Kohshiro OKIMURA

IPC: C09K13/04 ,  H01L21/306

CPC classification number: C09K13/04 ,  H01L21/30604

Abstract: A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.

公开(公告)号：US20230136986A1

公开(公告)日：2023-05-04

申请号：US17973953

申请日：2022-10-26

Applicant: TOKUYAMA CORPORATION

Inventor： Naoto NOMURA ,  Kosuke NORO ,  Yoshiki SEIKE ,  Manami OSHIO ,  Yuichiro KAWABATA ,  Seiji TONO

IPC: H01L21/465

Abstract: An object of the present invention is to provide an etching liquid having a high silicon etch selectivity with respect to silicon-germanium and a high long term stability at a processing temperature, in surface processing during the production of various semiconductor devices, especially various silicon composite semiconductor devices containing silicon-germanium, and the problem is solved by a silicon etching liquid containing an alkaline compound, an aldehyde compound, and water, the aldehyde compound being a water-soluble aromatic aldehyde.

公开(公告)号：US20240254389A1

公开(公告)日：2024-08-01

申请号：US18394206

申请日：2023-12-22

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Tatsuya HITOMI ,  Kohsuke NORO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30604

Abstract: A silicon etching solution containing an organic alkaline compound and water, the silicon etching solution further containing a compound represented by Formula (1) below, wherein a content of the compound represented by Formula (1) is 100 mass ppm or more:






where R1 is a single bond or a hydrocarbon group having carbon number from 1 to 5, R2 and R3 are each independently a hydrogen atom, a halogen atom, a hydroxy group, an amino group, an acetyl group, a carboxy group, a silyl group, a boryl group, a nitrile group, a thio group, a seleno group, or a hydrocarbon group having carbon number from 1 to 10, and these groups optionally further have a substituent.

公开(公告)号：US20240112917A1

公开(公告)日：2024-04-04

申请号：US18274856

申请日：2022-02-08

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Naoto NOMURA ,  Kohsuke NORO ,  Seiji TONO

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/30604 ,  C09K13/00

Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium.
[Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

公开(公告)号：US20230295499A1

公开(公告)日：2023-09-21

申请号：US18018362

申请日：2021-07-29

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30608

Abstract: A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH− (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X− (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)

公开(公告)号：US20230287270A1

公开(公告)日：2023-09-14

申请号：US18017765

申请日：2021-07-29

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30604

Abstract: A silicon etching liquid which contains a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium iodide represented by formula (2), and water. (1): R11R12R13R14N+·OH− (In formula (1), each of R11, R12, R13 and R14 independently represents an aryl group, a benzyl group or an alkyl group having from 1 to 16 carbon atoms; and the alkyl group, the aryl group or the benzyl group may have a hydroxyl group.) (2): R21R22R23R24N+·I− (In formula (2), R21, R22, R23 and R24 may be the same groups or different groups, and each represents an optionally substituted aryl group, benzyl group or alkyl group having from 1 to 10 carbon atoms.)

公开(公告)号：US20200248076A1

公开(公告)日：2020-08-06

申请号：US16781013

申请日：2020-02-04

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2  (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

公开(公告)号：US20190382352A1

公开(公告)日：2019-12-19

申请号：US16322511

申请日：2017-07-26

Applicant: Tokuyama Corporation

Inventor： Fumiaki IWASAKI ,  Hiromasa YAMAMOTO ,  Kenji TANAKA ,  Masahiko SEKI ,  Yoshiki SEIKE

IPC: C07D233/34 ,  C07D487/04 ,  C07D491/048 ,  C07D495/04

Abstract: In the method, a trione compound represented by the following formula (1) is (i) reduced by NaAlH2(OCH2CH2OCH3)2 and subsequently further reduced by a metal borohydride salt, or (ii) reduced by calcium borohydride, thereby producing an amide alcohol compound represented by the following formula (3) (wherein, R1 and R2 may be the same or different and each represents a hydrogen atom or a protecting group of an ureylene group; R4 represents an alkyl group, an aralkyl group, or an aryl group; and each of R5, R6, and R7 represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom).