公开(公告)号：US20130204416A1

公开(公告)日：2013-08-08

申请号：US13742603

申请日：2013-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Goro TAKAHASHI ,  Takahito KASAI ,  Takanori SAITO ,  Wenling WANG ,  Koji YOSHII ,  Tatsuya YAMAGUCHI

IPC: G05B19/418

CPC classification number: G05B19/418 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: The heat treatment apparatus that increases a temperature of a processing object and performs a heat treatment in a constant temperature, the heat treatment apparatus includes: a processing chamber which accommodates the processing object; a heating unit which heats the processing object accommodated in the processing chamber; a memory unit which stores two or more temperature control models that are previously created, a temperature controller which controls a temperature of the heating unit; and an apparatus controller which controls the temperature controller and the memory unit, wherein the apparatus controller selects a temperature control model among the two or more temperature control models according to desired heat treatment conditions, and wherein the temperature controller reads out the selected temperature control model from the memory unit to control the heating unit.

Abstract translation: 所述热处理装置具有：处理室，其容纳所述处理对象物;处理对象物， 加热单元，其加热容纳在处理室中的处理对象; 存储单元，其存储先前创建的两个或更多个温度控制模型;温度控制器，其控制所述加热单元的温度; 以及控制所述温度控制器和所述存储单元的装置控制器，其中所述装置控制器根据期望的热处理条件在所述两个或更多个温度控制模型中选择温度控制模型，并且其中所述温度控制器读出所选择的温度控制模型 从存储单元控制加热单元。

公开(公告)号：US20130186878A1

公开(公告)日：2013-07-25

申请号：US13742599

申请日：2013-01-16

Applicant: Tokyo Electron Limited

Inventor： Goro TAKAHASHI ,  Takanori SAITO ,  Wenling WANG ,  Koji YOSHII ,  Tatsuya YAMAGUCHI

IPC: F27D19/00 ,  F27D21/00

CPC classification number: F27D19/00 ,  F27B17/0025 ,  F27D21/0014 ,  H01L21/67109 ,  H01L21/67248

Abstract: The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperature detecting unit.

Abstract translation: 热处理装置包括：处理室，其容纳加工对象物; 加热单元，其加热容纳在处理室中的处理对象; 温度检测单元，其检测处理室的内部温度; 以及控制器，当由所述温度检测单元检测到的温度由于外部干扰而下降到预定的第一设定温度以下时，设定与所述温度检测单元检测到的温度相同的第二设定温度; 控制加热单元，使得第二设定温度和第一设定温度之间的第三设定温度与由温度检测单元检测到的温度相同; 并且控制加热单元，使得第一设定温度与第三设定温度与由温度检测单元检测到的温度相同后，由与温度检测单元检测到的温度相同。