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公开(公告)号：US20230416920A1
公开(公告)日：2023-12-28
申请号：US18210409
申请日：2023-06-15
Applicant: Tokyo Electron Limited
Inventor： Tatsuya YAMAGUCHI , Yutaka SASAKI , Makoto TAKAHASHI , Toru ISHII , Naoshige FUSHIMI , Koji YOSHII
IPC: C23C16/46 , C23C16/458 , C23C16/52 , C23C16/56 , C23C16/34 , C23C16/455
CPC classification number: C23C16/466 , C23C16/4584 , C23C16/52 , C23C16/56 , C23C16/345 , C23C16/45544 , H01L21/0217
Abstract: A substrate processing apparatus includes: a processing container that accommodates a substrate; a processing gas supply that supplies a processing gas into the processing container; an exhaust that exhausts an inside of the processing container; a heater that heats the processing container; and a cooling gas injector that injects a cooling gas for cooling the substrate.
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公开(公告)号：US20160379897A1
公开(公告)日：2016-12-29
申请号：US15191599
申请日：2016-06-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuteru OBARA , Koji YOSHII , Yuki WADA , Hitoshi KIKUCHI
IPC: H01L21/66 , C23C16/52 , C23C16/46 , G01J5/00 , C23C16/455 , H01L21/02 , H01L21/687 , G01K13/00 , C23C16/40 , C23C16/458
CPC classification number: G01J5/0007 , C23C16/402 , C23C16/45551 , C23C16/4584 , C23C16/46 , C23C16/52 , G01J5/089 , G02B26/12 , G05D23/1931 , H01L21/02164 , H01L21/0228 , H01L21/67248 , H01L21/68764 , H01L21/68771
Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.
Abstract translation: 提供了一种热处理设备，用于通过将基板安装在安装在处理容器中的旋转台的表面上并在旋转台的同时通过加热部分对基板进行加热来在基板上进行预定的成膜处理。 热处理装置包括：接触型的第一温度测量部件，被配置为测量加热部件的温度; 非接触式的第二温度测量部件，被配置为在旋转台旋转的状态下测量安装在旋转台上的基板的温度; 以及温度控制部，其被配置为基于由所述第一温度测量部测量的第一测量值和由所述第二温度测量部测量的第二测量值来控制所述加热部。
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公开(公告)号：US20130204416A1
公开(公告)日：2013-08-08
申请号：US13742603
申请日：2013-01-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Goro TAKAHASHI , Takahito KASAI , Takanori SAITO , Wenling WANG , Koji YOSHII , Tatsuya YAMAGUCHI
IPC: G05B19/418
CPC classification number: G05B19/418 , H01L21/67109 , H01L21/67115 , H01L21/67248
Abstract: The heat treatment apparatus that increases a temperature of a processing object and performs a heat treatment in a constant temperature, the heat treatment apparatus includes: a processing chamber which accommodates the processing object; a heating unit which heats the processing object accommodated in the processing chamber; a memory unit which stores two or more temperature control models that are previously created, a temperature controller which controls a temperature of the heating unit; and an apparatus controller which controls the temperature controller and the memory unit, wherein the apparatus controller selects a temperature control model among the two or more temperature control models according to desired heat treatment conditions, and wherein the temperature controller reads out the selected temperature control model from the memory unit to control the heating unit.
Abstract translation: 所述热处理装置具有：处理室，其容纳所述处理对象物;处理对象物， 加热单元，其加热容纳在处理室中的处理对象; 存储单元，其存储先前创建的两个或更多个温度控制模型;温度控制器，其控制所述加热单元的温度; 以及控制所述温度控制器和所述存储单元的装置控制器，其中所述装置控制器根据期望的热处理条件在所述两个或更多个温度控制模型中选择温度控制模型，并且其中所述温度控制器读出所选择的温度控制模型 从存储单元控制加热单元。
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公开(公告)号：US20130186878A1
公开(公告)日：2013-07-25
申请号：US13742599
申请日：2013-01-16
Applicant: Tokyo Electron Limited
Inventor： Goro TAKAHASHI , Takanori SAITO , Wenling WANG , Koji YOSHII , Tatsuya YAMAGUCHI
CPC classification number: F27D19/00 , F27B17/0025 , F27D21/0014 , H01L21/67109 , H01L21/67248
Abstract: The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperature detecting unit.
Abstract translation: 热处理装置包括：处理室，其容纳加工对象物; 加热单元，其加热容纳在处理室中的处理对象; 温度检测单元，其检测处理室的内部温度; 以及控制器，当由所述温度检测单元检测到的温度由于外部干扰而下降到预定的第一设定温度以下时，设定与所述温度检测单元检测到的温度相同的第二设定温度; 控制加热单元，使得第二设定温度和第一设定温度之间的第三设定温度与由温度检测单元检测到的温度相同; 并且控制加热单元，使得第一设定温度与第三设定温度与由温度检测单元检测到的温度相同后，由与温度检测单元检测到的温度相同。
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公开(公告)号：US20190276935A1
公开(公告)日：2019-09-12
申请号：US16426567
申请日：2019-05-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato YONEZAWA , Shigehiro MIURA , Hiroyuki AKAMA , Koji YOSHII
IPC: C23C16/46 , C23C16/458 , C23C16/52 , C23C16/455
Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.
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Patent Agency Ranking
公开(公告)号：US20170051403A1
公开(公告)日：2017-02-23
申请号：US15240316
申请日：2016-08-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato YONEZAWA , Shigehiro MIURA , Hiroyuki AKAMA , Koji YOSHII
IPC: C23C16/455 , C23C16/46 , C23C16/52
CPC classification number: C23C16/46 , C23C16/45536 , C23C16/45551 , C23C16/4584 , C23C16/52
Abstract: A film forming apparatus for performing a predetermine film forming process on a substrate mounted on an upper surface of a rotary table installed within a process vessel while rotating the rotary table and heating the substrate by a heating part, includes: a contact type first temperature measuring part configured to measure a temperature of the heating part; a non-contact type second temperature measuring part configured to measure a temperature of the substrate; and a control part configured to control a power supplied to the heating part based on at least one among a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part. The control part changes a method for controlling the power when the predetermined film forming process is performed on the substrate and when the substrate is loaded into or unloaded from the process vessel.
Abstract translation: 一种成膜装置，用于在旋转所述旋转台并通过加热部加热所述基板的同时在安装在处理容器的旋转台的上表面上的基板上进行预定的成膜处理，所述成膜装置包括：接触型第一温度测量 被配置为测量加热部件的温度的部件; 非接触型第二温度测量部件，被配置为测量所述基板的温度; 以及控制部，其基于由所述第一温度测量部测量的第一测量值和由所述第二温度测量部测量的第二测量值中的至少一个来控制供应到所述加热部件的功率。 当在基板上执行预定的成膜处理时以及当将基板装载到处理容器中或从处理容器卸载时，控制部分改变用于控制功率的方法。
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公开(公告)号：US20170003171A1
公开(公告)日：2017-01-05
申请号：US15191602
申请日：2016-06-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki WADA , Koji YOSHII , Kazuteru OBARA
IPC: G01J5/00 , H01L21/687 , H01L21/66 , G01J5/10 , H01L21/67
CPC classification number: G01J5/0007 , G01J5/047 , G01J5/0809 , G01J2005/0081 , H01L21/67248 , H01L22/10
Abstract: A temperature measuring method for measuring a temperature in a processing vessel of a semiconductor manufacturing apparatus by a radiation temperature measurement part, which is configured to measure a temperature by detecting infrared rays radiated from an object, includes: detecting infrared rays radiated from a low resistance silicon wafer having a resistivity of 0.02 Ω·cm or less at room temperature (20 degrees C.) by the radiation temperature measurement part.
Abstract translation: 一种用于通过辐射温度测量部分测量半导体制造装置的处理容器中的温度的温度测量方法，其被配置为通过检测从物体辐射的红外线来测量温度，包括：检测从低电阻辐射的红外线 通过辐射温度测量部分在室温（20℃）下具有0.02Ω·cm以下的电阻率的硅晶片。
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公开(公告)号：US20230317475A1
公开(公告)日：2023-10-05
申请号：US18185674
申请日：2023-03-17
Applicant: Tokyo Electron Limited
Inventor： Koji YOSHII , Tatsuya YAMAGUCHI
IPC: H01L21/67
CPC classification number: H01L21/67109 , H01L21/67248
Abstract: A processing apparatus includes a processing chamber configured to accommodate a substrate, a furnace body, covering a periphery of the processing chamber, and configured to heat the substrate accommodated inside the processing chamber, a gas supply unit configured to supply a cooling gas to a temperature controlling space between the processing chamber and the furnace body, and a gas discharge unit configured to discharge the gas from the temperature controlling space. The gas discharge unit includes a plurality of exhaust holes configured to discharge the gas in the temperature controlling space, located at a plurality of positions along an axial direction of the furnace body in a sidewall of the furnace body.
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9.发明申请公开(公告)号：US20210063247A1
公开(公告)日：2021-03-04
申请号：US17007009
申请日：2020-08-31
Applicant: Tokyo Electron Limited , Furuya Metal Co.,Ltd.
Inventor： Hisashi INOUE , Masahiro KOBAYASHI , Yasuaki KIKUCHI , Tatsuya YAMAGUCHI , Koji YOSHII , Kensuke MORITA , Jun ITABASHI
Abstract: A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.
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公开(公告)号：US20200080895A1
公开(公告)日：2020-03-12
申请号：US16685047
申请日：2019-11-15
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kazuteru OBARA , Koji YOSHII , Yuki WADA , Hitoshi KIKUCHI
IPC: G01J5/00 , C23C16/40 , C23C16/52 , C23C16/46 , C23C16/458 , C23C16/455 , H01L21/02 , H01L21/687 , G05D23/19 , H01L21/67 , G01J5/08 , G02B26/12
Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.
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