公开(公告)号：US20220084798A1

公开(公告)日：2022-03-17

申请号：US17425026

申请日：2020-01-21

Applicant: Tokyo Electron Limited

Inventor： Hachishiro IIZUKA ,  Yasuaki TANIIKE

IPC: H01J37/32

Abstract: This plasma processing device is provided with an electrode structure. The electrode structure comprises a stage, a support portion, a first dielectric, a second dielectric, a third dielectric, a first shield, a second shield, and a third shield. The support portion is connected to a lower portion of the stage. The first dielectric is disposed in a peripheral region of an upper surface of the stage. The second dielectric is disposed on a side surface and a lower surface of the stage. The third dielectric is disposed around the support portion. The first shield is disposed on the upper surface of the first dielectric around a body to be processed mounted on the stage. The second shield is connected to the first shield and disposed on the side surface of the stage, with the second dielectric therebetween. The third shield is connected to the second shield and disposed on the lower surface of the stage and around the support portion, with the second dielectric and the third dielectric therebetween. The third shield is grounded.

公开(公告)号：US20210142989A1

公开(公告)日：2021-05-13

申请号：US17052020

申请日：2019-04-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/455

Abstract: An upper electrode includes a central electrode, a peripheral electrode, multiple dielectric bodies, and multiple power supply electrodes. The central electrode is disposed on a counter surface of the upper electrode facing a substrate support, on which a target object that is a plasma processing target is placed, at a position corresponding to a central portion of the substrate support. The peripheral electrode is disposed on the counter surface to encircle a periphery of the central electrode. The dielectric bodies are laminated between the counter surface and a surface of the upper electrode opposite to the counter surface. The power supply electrode is arranged between the dielectric bodies to electrically connect the central electrode and the peripheral electrode respectively to power supply terminals individually disposed at the surface opposite to the counter surface.

公开(公告)号：US20210301398A1

公开(公告)日：2021-09-30

申请号：US17264208

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Hachishiro IIZUKA

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458

Abstract: A film forming apparatus includes: a stage on which a workpiece on which a film is to be formed is placed; a gas supply part provided so as to face the stage, including a heater provided to be controlled to a predetermined temperature, and configured to supply a carrier gas; and a vaporization part provided between the stage and the gas supply part, and configured to be heated by heat generated from the gas supply part to vaporize a film-formation material supplied in a liquid state.

公开(公告)号：US20210233750A1

公开(公告)日：2021-07-29

申请号：US17054896

申请日：2019-05-17

Applicant: Tokyo Electron Limited

Inventor： Hachishiro IIZUKA

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458

Abstract: A plasma processing apparatus includes: a support provided with a wiring used for a plasma processing and configured to support a stage on which a workpiece serving as a plasma processing target is disposed; a filter that is connected to an end portion of the wiring, and attenuates noise propagated through the wiring; and an elevating unit that moves the support and the filter up and down integrally.

公开(公告)号：US20170133245A1

公开(公告)日：2017-05-11

申请号：US15347719

申请日：2016-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67103 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833

Abstract: A substrate mounting mechanism, for heating and cooling a substrate mounted thereon, includes a heating member having a heating unit configured to heat a substrate mounted on the heating member, a cooling member configured to cool the substrate and provided below the heating member, and an attaching/detaching unit configured to separate the heating member from the the cooling member and allow the heating member to come into contact with the cooling member. The substrate mounted on the heating member is heated in a state where the heating member and the cooling member are separated from each other by the attaching/detaching unit and power is supplied to the heating unit. Further, the substrate mounted on the heating member is cooled in a state where the heating member is made to be in contact with the cooling member by the attaching/detaching unit and no power is supplied to the heating unit.

公开(公告)号：US20230052858A1

公开(公告)日：2023-02-16

申请号：US17759609

申请日：2021-01-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50

Abstract: There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

公开(公告)号：US20210079526A1

公开(公告)日：2021-03-18

申请号：US16953363

申请日：2020-11-20

Applicant: Tokyo Electron Limited

Inventor： Hachishiro IIZUKA

IPC: C23C16/455 ,  C23C16/505

Abstract: A substrate processing apparatus includes a chamber, a placing pedestal, and a shower head. The shower head includes a first base member, a second base member, a shower plate, and a plurality of heat transfer members. The first base member includes a first cylindrical wall, a second cylindrical wall, and a first upper wall. The second base member includes a third cylindrical wall, a fourth cylindrical wall, and a second upper wall. The shower plate includes a plurality of through holes and is fixed to a lower end of the second cylindrical wall and a lower end of the fourth cylindrical wall. Each of the heat transfer members is arranged between the first upper wall and the second upper wall, and is in contact with a lower surface of the first upper wall and an upper surface of the second upper wall.

公开(公告)号：US20210005482A1

公开(公告)日：2021-01-07

申请号：US16918774

申请日：2020-07-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA ,  Masahisa WATANABE ,  Yuichiro WAGATSUMA

IPC: H01L21/67

Abstract: A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

公开(公告)号：US20130264014A1

公开(公告)日：2013-10-10

申请号：US13794954

申请日：2013-03-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H05H2001/4667

Abstract: A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.

Abstract translation: 一种等离子体处理装置，包括：ICP天线，设置在与安装台相对的处理室的外侧，用于将高频电力供给到处理室;以及窗口部件，由导体构成，设置在安装台和ICP天线之间 ，形成处理室的壁的一部分。 窗构件包括用于在窗构件的厚度方向上传送高频功率的传输单元。 每个传动单元具有狭缝，其在厚度方向上延伸穿过窗构件，并且构造成使得其宽度是可变的。