公开(公告)号：US20210098254A1

公开(公告)日：2021-04-01

申请号：US17032915

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi TAKAGI ,  Kazuya KITAMURA ,  Hsiulin TSAI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  C23C16/46

Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

公开(公告)号：US20190043719A1

公开(公告)日：2019-02-07

申请号：US16046222

申请日：2018-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKAGI ,  Hiroyuki HAYASHI ,  Hsiulin TSAI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.